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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HER303T/RDIODE GEN PURP 200V 3A DO201AD EIC SEMICONDUCTOR INC. |
1,250 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 3A | -65°C ~ 150°C | 1.1 V @ 3 A | |
|
FEPF16DTDIODE GEN PURP 200V 16A ITO220AB EIC SEMICONDUCTOR INC. |
530 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 85pF @ 4V, 1MHz | 35 ns | 10 µA @ 200 V | 200 V | 16A | -55°C ~ 150°C | 950 mV @ 8 A | |
|
|
1N4933BULKFR 1A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC. |
98,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A | |
|
|
1N4934BULKFR 1A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC. |
90,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A | |
|
|
1N5393STD 1.5A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC. |
60,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1.5A (DC) | -65°C ~ 175°C | 1.1 V @ 1.5 A | |
|
|
1N4935BULKFR 1A, CASE TYPE: DO-41 EIC SEMICONDUCTOR INC. |
51,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 150°C | 1.2 V @ 1 A | |
|
|
1N5406BULKSTD 3A, CASE TYPE: DO-201AD EIC SEMICONDUCTOR INC. |
26,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 3A (DC) | -65°C ~ 175°C | 950 mV @ 3 A | |
|
|
1N5396BULKZENER 5W, CASE TYPE: DO-15 EIC SEMICONDUCTOR INC. |
20,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 500 V | 500 V | 1.5A (DC) | -65°C ~ 175°C | 1.1 V @ 1.5 A | |
|
|
1N5394BULKZENER 5W, CASE TYPE: DO-15 EIC SEMICONDUCTOR INC. |
20,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 300 V | 300 V | 1.5A (DC) | -65°C ~ 175°C | 1.1 V @ 1.5 A | |
|
|
1N5397BULKZENER 5W, CASE TYPE: DO-15 EIC SEMICONDUCTOR INC. |
20,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 A @ 600 V | 600 V | 1.5A (DC) | -65°C ~ 175°C | 1.1 V @ 1.5 A | |
|
|
1N5392BULKZENER 5W, CASE TYPE: DO-15 EIC SEMICONDUCTOR INC. |
20,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1.5A (DC) | -65°C ~ 175°C | 1.1 V @ 1.5 A | |
|
|
1N5391BULKZENER 5W, CASE TYPE: DO-15 EIC SEMICONDUCTOR INC. |
20,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1.5A (DC) | -65°C ~ 175°C | 1.1 V @ 1.5 A | |
|
|
1N5405BULKSTD 3A, CASE TYPE: DO-201AD EIC SEMICONDUCTOR INC. |
15,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | - | 5 µA @ 500 V | 500 V | 3A (DC) | -65°C ~ 175°C | 1 V @ 3 A | |
|
|
1N5401BULKSTD 3A, CASE TYPE: DO-201AD EIC SEMICONDUCTOR INC. |
14,647 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A (DC) | -65°C ~ 175°C | 950 mV @ 3 A | |
|
|
1N5403BULKSTD 3A, CASE TYPE: DO-201AD EIC SEMICONDUCTOR INC. |
13,500 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | - | 5 µA @ 300 V | 300 V | 3A (DC) | -65°C ~ 175°C | 1 V @ 3 A | |
|
|
1N5395BULKZENER 5W, CASE TYPE: DO-15 EIC SEMICONDUCTOR INC. |
10,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1.5A (DC) | -65°C ~ 175°C | 1.1 V @ 1.5 A | |
|
|
1N5402BULKSTD 3A, CASE TYPE: DO-201AD EIC SEMICONDUCTOR INC. |
6,750 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A (DC) | -65°C ~ 175°C | 950 mV @ 3 A | |
|
|
SF55-BULKSUPER FAST RECOVERY RECTIFIER DI EIC SEMICONDUCTOR INC. |
3,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 5A | -65°C ~ 150°C | 1.7 V @ 5 A | |
|
|
1N5400BULKSTD 3A, CASE TYPE: DO-201AD EIC SEMICONDUCTOR INC. |
4,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 3A (DC) | -65°C ~ 175°C | 950 mV @ 3 A | |
|
|
1N5407BULKSTD 3A, CASE TYPE: DO-201AD EIC SEMICONDUCTOR INC. |
4,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 3A (DC) | -65°C ~ 175°C | 950 mV @ 3 A |
- 1500+ Media giornaliera RFQ
- 20,000.000 Unità prodotto standard
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- 15,000+ Magazzino in stock
