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Diodi-Raddrizzatori-Singoli

Numero parte produttore	Disponibilità	Prezzo	Quantità	Scheda tecnica	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
RM11A-BULK SILICON RECITIFIER DIODE; CASE T EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Scheda tecnica	Bag	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	-	10 µA @ 600 V	600 V	1.2A (DC)	-65°C ~ 175°C	920 mV @ 1.5 A
RM11B-BULK SILICON RECITIFIER DIODE; CASE T EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Scheda tecnica	Bag	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	-	10 µA @ 800 V	800 V	1.2A (DC)	-65°C ~ 175°C	920 mV @ 1.5 A
SF54-BULK SUPER FAST RECOVERY RECTIFIER DI EIC SEMICONDUCTOR INC.	3,000	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	5A	-65°C ~ 150°C	950 mV @ 5 A
ESJA04-03A DIODE GEN PURP 3000V 1MA M1A EIC SEMICONDUCTOR INC.	4,500	-	RFQ	Scheda tecnica	Bag	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	-	80 ns	2 µA @ 3000 V	3000 V	1mA	120°C (Max)	12 V @ 10 mA
SF56-BULK SUPER FAST RECOVERY RECTIFIER DI EIC SEMICONDUCTOR INC.	3,500	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	5A	-65°C ~ 150°C	1.7 V @ 5 A
HER306T/R DIODE GEN PURP 600V 3A DO201AD EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	75 ns	10 µA @ 600 V	600 V	3A	-65°C ~ 150°C	1.7 V @ 3 A
HER305T/R DIODE GEN PURP 400V 3A DO201AD EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Scheda tecnica	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	3A	-65°C ~ 150°C	1.1 V @ 3 A
RM11C-BULK SILICON RECITIFIER DIODE; CASE T EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Scheda tecnica	Bag	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	-	10 µA @ 1000 V	1000 V	1.2A (DC)	-65°C ~ 175°C	920 mV @ 1.5 A
HVR320BULK DIODE GEN PURP 2000V 3A DO201AD EIC SEMICONDUCTOR INC.	2,981	-	RFQ	Scheda tecnica	Bag	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	36pF @ 4V, 1MHz	-	10 µA @ 2000 V	2000 V	3A	-40°C ~ 150°C	2.2 V @ 3 A
HER303BULK DIODE GEN PURP 200V 3A DO201AD EIC SEMICONDUCTOR INC.	2,500	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	3A	-65°C ~ 150°C	1.1 V @ 3 A
HER305BULK DIODE GEN PURP 400V 3A DO201AD EIC SEMICONDUCTOR INC.	5,000	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	3A	-65°C ~ 150°C	1.1 V @ 3 A
FR101BULK DIODE GEN PURP 50V 1A DO41 EIC SEMICONDUCTOR INC.	39,000	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	150 ns	5 µA @ 50 V	50 V	1A	-65°C ~ 150°C	1.3 V @ 1 A
FR102BULK DIODE GEN PURP 100V 1A DO41 EIC SEMICONDUCTOR INC.	38,000	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	150 ns	5 µA @ 100 V	100 V	1A	-65°C ~ 150°C	1.3 V @ 1 A
FR103BULK DIODE GEN PURP 200V 1A DO41 EIC SEMICONDUCTOR INC.	38,000	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	1A	-65°C ~ 150°C	1.3 V @ 1 A
FR106BULK DIODE GEN PURP 800V 1A DO41 EIC SEMICONDUCTOR INC.	37,000	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	500 ns	5 µA @ 800 V	800 V	1A	-65°C ~ 150°C	1.3 V @ 1 A
BA159BULK DIODE GEN PURP 1000V 1A DO41 EIC SEMICONDUCTOR INC.	17,000	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	250 ns	5 µA @ 1000 V	1000 V	1A	-65°C ~ 150°C	1.3 V @ 1 A
SF13-BULK SUPER FAST RECOVERY RECTIFIER DI EIC SEMICONDUCTOR INC.	15,000	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	1A	-65°C ~ 150°C	950 mV @ 1 A
BA158BULK DIODE GEN PURP 600V 1A DO41 EIC SEMICONDUCTOR INC.	13,000	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	150 ns	5 µA @ 600 V	600 V	1A	-65°C ~ 150°C	1.3 V @ 1 A
FR105BULK DIODE GEN PURP 600V 1A DO41 EIC SEMICONDUCTOR INC.	10,000	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	250 ns	5 µA @ 600 V	600 V	1A	-65°C ~ 150°C	1.3 V @ 1 A
HER101BULK DIODE GEN PURP 50V 1A DO41 EIC SEMICONDUCTOR INC.	7,000	-	RFQ	Scheda tecnica	Bag	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	1A	-65°C ~ 150°C	1.1 V @ 1 A