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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
10A05STD 10A, CASE TYPE: D6 EIC SEMICONDUCTOR INC. |
3,200 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 10A | -65°C ~ 150°C | 1 V @ 10 A | |
|
|
MR754T/RDIODE GEN PURP 400V 6A D6 EIC SEMICONDUCTOR INC. |
2,400 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 25 µA @ 400 V | 400 V | 6A | -65°C ~ 175°C | 900 mV @ 6 A |
|
|
SF16-BULKSUPER FAST RECOVERY RECTIFIER DI EIC SEMICONDUCTOR INC. |
16,800 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.7 V @ 1 A | |
|
HER503BULKDIODE GEN PURP 200V 5A DO201AD EIC SEMICONDUCTOR INC. |
3,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 10 µA @ 200 V | 200 V | 5A | -65°C ~ 150°C | 1.1 V @ 5 A | |
|
|
AR3504DIODE GEN PURP 400V 35A MICRODE EIC SEMICONDUCTOR INC. |
2,000 | - |
RFQ |
Scheda tecnica |
Bag | Automotive | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 5 µA @ 400 V | 400 V | 35A | -65°C ~ 175°C | 1.1 V @ 35 A |
|
|
SB3B0-T/RSCHOTTKY BARRIER RECTIFIER DIODE EIC SEMICONDUCTOR INC. |
3,750 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 100 V | 100 V | 3A | -65°C ~ 150°C | 790 mV @ 3 A | |
|
|
HER107BULKDIODE GEN PURP 800V 1A DO41 EIC SEMICONDUCTOR INC. |
15,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 150°C | 1.7 V @ 1 A | |
|
|
HER104BULKDIODE GEN PURP 300V 1A DO41 EIC SEMICONDUCTOR INC. |
10,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
|
HER105BULKDIODE GEN PURP 400V 1A DO41 EIC SEMICONDUCTOR INC. |
9,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.1 V @ 1 A | |
|
|
FR307BULKDIODE GEN PURP 1000V 3A DO201AD EIC SEMICONDUCTOR INC. |
8,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 500 ns | 10 µA @ 1000 V | 1000 V | 3A | -65°C ~ 150°C | 1.3 V @ 3 A | |
|
|
HER302BULKDIODE GEN PURP 100V 3A DO201AD EIC SEMICONDUCTOR INC. |
7,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 3A | -65°C ~ 150°C | 1.1 V @ 3 A | |
|
|
HER301BULKDIODE GEN PURP 50V 3A DO201AD EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A | -65°C ~ 150°C | 1.1 V @ 3 A | |
|
|
BY399FR 3A, CASE TYPE: DO-201AD EIC SEMICONDUCTOR INC. |
3,500 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 250 ns | 10 µA @ 800 V | 800 V | 3A | -65°C ~ 150°C | 1.25 V @ 3 A | |
|
|
HER108BULKDIODE GEN PURP 1000V 1A DO41 EIC SEMICONDUCTOR INC. |
2,500 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 150°C | 1.7 V @ 1 A | |
|
|
HER304BULKDIODE GEN PURP 300V 3A DO201AD EIC SEMICONDUCTOR INC. |
8,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -65°C ~ 150°C | 1.1 V @ 3 A | |
|
|
SR1RFAST RECOVERY RECTIFIER DIODES; EIC SEMICONDUCTOR INC. |
5,000 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 4V, 1MHz | 200 ns | 5 µA @ 2000 V | 2000 V | 500mA | -40°C ~ 150°C | 3 V @ 500 mA | |
|
|
MR760AUTOMOTIVE RECTIFIER 22A,CASE TY EIC SEMICONDUCTOR INC. |
550 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 25 µA @ 1000 V | 1000 V | 22A | -65°C ~ 175°C | 900 mV @ 6 A | |
|
|
MR850BULKDIODE GEN PURP 50V 3A DO201AD EIC SEMICONDUCTOR INC. |
1,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | 150 ns | 10 µA @ 50 V | 50 V | 3A | -65°C ~ 150°C | 1.25 V @ 3 A | |
|
|
MR854BULKDIODE GEN PURP 400V 3A DO201AD EIC SEMICONDUCTOR INC. |
1,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 3A | -65°C ~ 150°C | 1.25 V @ 3 A | |
|
|
1N5817BULKDIODE SCHOTTKY 20V 1A DO41 EIC SEMICONDUCTOR INC. |
1,000 | - |
RFQ |
Scheda tecnica |
Bag | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 110pF @ 4V, 1MHz | - | 1 mA @ 20 V | 20 V | 1A | -65°C ~ 125°C | 450 mV @ 1 A |
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