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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR102 A0GDIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation |
2,138 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
SR305 A0GDIODE SCHOTTKY 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,760 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 700 mV @ 3 A | |
|
RSFMLHMHGDIODE GEN PURP 500MA SUB SMA Taiwan Semiconductor Corporation |
2,386 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | - | 500mA | -55°C ~ 150°C | 1.3 V @ 500 mA |
|
SF26G B0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
2,652 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
MBRF790 C0GDIODE SCHOTTKY 90V 7.5A ITO220AC Taiwan Semiconductor Corporation |
2,103 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 7.5A | -55°C ~ 150°C | 920 mV @ 7.5 A | |
|
|
SS24LHMHGDIODE SCHOTTKY 40V 2A SUB SMA Taiwan Semiconductor Corporation |
2,555 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 500 mV @ 2 A |
|
|
SR102HA0GDIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation |
2,470 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
|
SR305HA0GDIODE SCHOTTKY 50V 3A DO201AD Taiwan Semiconductor Corporation |
2,682 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 700 mV @ 3 A |
|
S1A M2GDIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,003 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SF26GHB0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
3,966 | - |
RFQ |
Scheda tecnica |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
|
|
MBRF790HC0GDIODE SCHOTTKY 90V 7.5A ITO220AC Taiwan Semiconductor Corporation |
3,823 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 7.5A | -55°C ~ 150°C | 920 mV @ 7.5 A |
|
SS25 M4GDIODE SCHOTTKY 50V 2A DO214AA Taiwan Semiconductor Corporation |
3,215 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
|
|
SR103 A0GDIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation |
2,606 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
|
SR306HA0GDIODE SCHOTTKY 60V 3A DO201AD Taiwan Semiconductor Corporation |
3,386 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 700 mV @ 3 A |
|
|
S1AB M4GDIODE GEN PURP 50V 1A DO214AA Taiwan Semiconductor Corporation |
3,112 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 12pF @ 4V, 1MHz | - | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
SF27G B0GDIODE GEN PURP 500V 2A DO204AC Taiwan Semiconductor Corporation |
3,403 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
MUR820 C0GDIODE GEN PURP 200V 8A TO220AC Taiwan Semiconductor Corporation |
3,679 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 25 ns | 5 µA @ 200 V | 200 V | 8A | -55°C ~ 175°C | 975 mV @ 8 A | |
|
|
SS25HM4GDIODE SCHOTTKY 50V 2A DO214AA Taiwan Semiconductor Corporation |
2,183 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
|
|
SR103HA0GDIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation |
3,882 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
|
SR309 A0GDIODE SCHOTTKY 90V 3A DO201AD Taiwan Semiconductor Corporation |
2,858 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
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