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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S1AHM2GDIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation |
2,646 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 12pF @ 4V, 1MHz | 1.5 µs | 1 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
SF27GHB0GDIODE GEN PURP 500V 2A DO204AC Taiwan Semiconductor Corporation |
2,655 | - |
RFQ |
Scheda tecnica |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 500 V | 500 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
MUR820HC0GDIODE GEN PURP 200V 8A TO220AC Taiwan Semiconductor Corporation |
3,338 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 200 V | 200 V | 8A | -55°C ~ 175°C | 975 mV @ 8 A |
|
SS25L M2GDIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation |
2,724 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
|
SR104HA0GDIODE SCHOTTKY 40V 1A DO204AL Taiwan Semiconductor Corporation |
3,607 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A |
|
SR309HA0GDIODE SCHOTTKY 90V 3A DO201AD Taiwan Semiconductor Corporation |
3,861 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
|
|
S1AL M2GDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
2,487 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
SD101AW RHGDIODE SCHOTTKY 60V 15MA SOD123 Taiwan Semiconductor Corporation |
2,815 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 1 ns | 200 nA @ 60 V | 60 V | 15mA (DC) | -65°C ~ 125°C | 1 V @ 15 mA | |
|
|
SD101BW RHGDIODE SCHOTTKY 50V 15MA SOD123 Taiwan Semiconductor Corporation |
2,454 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2.1pF @ 0V, 1MHz | 1 ns | 200 nA @ 50 V | 50 V | 15mA (DC) | -65°C ~ 125°C | 950 mV @ 15 mA | |
|
|
SF28G B0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,849 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
MUR840 C0GDIODE GEN PURP 400V 8A TO220AC Taiwan Semiconductor Corporation |
2,787 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 50 ns | 5 µA @ 400 V | 400 V | 8A | -55°C ~ 175°C | 1.3 V @ 8 A | |
|
|
SS25L MHGDIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation |
3,386 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A | |
|
|
SR105HA0GDIODE SCHOTTKY 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,568 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A |
|
|
SR310HA0GDIODE SCHOTTKY 100V 3A DO201AD Taiwan Semiconductor Corporation |
2,682 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
|
|
S1AL MHGDIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,705 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SF28GHB0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,481 | - |
RFQ |
Scheda tecnica |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
|
MUR840HC0GDIODE GEN PURP 400V 8A TO220AC Taiwan Semiconductor Corporation |
3,289 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 400 V | 400 V | 8A | -55°C ~ 175°C | 1.3 V @ 8 A |
|
|
SS25LHM2GDIODE SCHOTTKY 50V 2A SUB SMA Taiwan Semiconductor Corporation |
3,002 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
|
|
SR106HA0GDIODE SCHOTTKY 60V 1A DO204AL Taiwan Semiconductor Corporation |
3,145 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A |
|
|
SR315HA0GDIODE SCHOTTKY 150V 3A DO201AD Taiwan Semiconductor Corporation |
2,718 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 3A | -55°C ~ 150°C | 850 mV @ 3 A |
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