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| Foto: | Numero parte produttore | Disponibilità | Prezzo | Quantità | Scheda tecnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BAS19W RVGDIODE GEN PURP 100V 200MA SOT323 Taiwan Semiconductor Corporation |
3,369 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 200mA | -55°C ~ 150°C | 1.25 V @ 100 mA | |
|
SF2L6GHB0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
3,207 | - |
RFQ |
Scheda tecnica |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A |
|
MURF10L60 C0GDIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation |
2,613 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 5 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.3 V @ 10 A | |
|
SS26LHM2GDIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation |
3,443 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
|
SR115 A0GDIODE SCHOTTKY 150V 1A DO204AL Taiwan Semiconductor Corporation |
3,377 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
SR503 A0GDIODE SCHOTTKY 30V 5A DO201AD Taiwan Semiconductor Corporation |
2,554 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 5A | -55°C ~ 125°C | 550 mV @ 5 A | |
|
|
S1BL MHGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,641 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SF2L8G B0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
3,544 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A | |
|
|
MURF8L60 C0GDIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
3,795 | - |
RFQ |
Scheda tecnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 65 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 175°C | 1.3 V @ 8 A | |
|
|
SS26LHMHGDIODE SCHOTTKY 60V 2A SUB SMA Taiwan Semiconductor Corporation |
2,343 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
|
|
SR115HA0GDIODE SCHOTTKY 150V 1A DO204AL Taiwan Semiconductor Corporation |
2,331 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
SR503HA0GDIODE SCHOTTKY 30V 5A DO201AD Taiwan Semiconductor Corporation |
2,628 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 5A | -55°C ~ 125°C | 550 mV @ 5 A |
|
|
S1BLHM2GDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,144 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
|
SF2L8GHB0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
2,837 | - |
RFQ |
Scheda tecnica |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.7 V @ 2 A |
|
|
MURF8L60HC0GDIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
3,753 | - |
RFQ |
Scheda tecnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 5 µA @ 600 V | 600 V | 8A | -55°C ~ 175°C | 1.3 V @ 8 A |
|
SS29 M4GDIODE SCHOTTKY 90V 2A DO214AA Taiwan Semiconductor Corporation |
2,252 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 2A | -55°C ~ 150°C | 850 mV @ 2 A | |
|
|
UF1A A0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,004 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
SR504HA0GDIODE SCHOTTKY 40V 5A DO201AD Taiwan Semiconductor Corporation |
3,263 | - |
RFQ |
Scheda tecnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 5A | -55°C ~ 125°C | 550 mV @ 5 A |
|
|
S1BLHMHGDIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation |
2,302 | - |
RFQ |
Scheda tecnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.1 V @ 1 A |
|
|
SF31G B0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,721 | - |
RFQ |
Scheda tecnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 80pF @ 4V, 1MHz | 35 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 950 mV @ 3 A |
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