Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK3111-Z-E1-AZ

2SK3111-Z-E1-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
6,000 -

RFQ

2SK3111-Z-E1-AZ

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
2SJ606-Z-AZ

2SJ606-Z-AZ

P-CHANNEL SWITCHING POWER MOSFET

Renesas Electronics America Inc
297 -

RFQ

2SJ606-Z-AZ

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
SIHA24N65EF-GE3

SIHA24N65EF-GE3

N-CHANNEL 650V

Vishay Siliconix
1,000 -

RFQ

SIHA24N65EF-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2774 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF21N60NT

FCPF21N60NT

1-ELEMENT, N-CHANNEL

Fairchild Semiconductor
1,044 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V - - - - - - - - - - Through Hole
AUIRFB8405

AUIRFB8405

MOSFET N-CH 40V 120A TO220AB

Infineon Technologies
1,000 -

RFQ

AUIRFB8405

Scheda tecnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.5mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Through Hole
BTC30010-1TAA

BTC30010-1TAA

BUFFER/INVERTER PERIPHL DRIVER

Infineon Technologies
8,921 -

RFQ

BTC30010-1TAA

Scheda tecnica

Bulk - Active - - - - - - - - - - - - - Surface Mount
FS100VSJ-03F-T11X5

FS100VSJ-03F-T11X5

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
18,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SIHA24N80AE-GE3

SIHA24N80AE-GE3

MOSFET N-CH 800V 9A TO220

Vishay Siliconix
757 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 9A (Tc) - 184mOhm @ 10A, 10V 4V @ 250µA 89 nC @ 10 V ±30V 1836 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDA20N50

FDA20N50

MOSFET N-CH 500V 22A TO3PN

Fairchild Semiconductor
80,300 -

RFQ

FDA20N50

Scheda tecnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) - 230mOhm @ 11A, 10V 5V @ 250µA 59.5 nC @ 10 V - 3120 pF @ 25 V - - - Through Hole
BFL4004

BFL4004

MOSFET N-CH 800V 4.3A TO220FI

Sanyo
10,870 -

RFQ

BFL4004

Scheda tecnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) - 2.5Ohm @ 3.25A, 10V 4V @ 1mA 36 nC @ 10 V ±30V 710 pF @ 30 V - 2W (Ta), 36W (Tc) 150°C Through Hole
RBA160N04AHPF-4UA01#GB0

RBA160N04AHPF-4UA01#GB0

POWER TRS2 AUTOMOTIVE MOS MP-25L

Renesas Electronics America Inc
1,600 -

RFQ

RBA160N04AHPF-4UA01#GB0

Scheda tecnica

Tray Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.25mOhm @ 80A, 10V 4V @ 250µA 236 nC @ 10 V ±20V 13200 pF @ 25 V - 1.8W (Ta), 250W (Tc) 175°C Surface Mount
IRF244

IRF244

N-CHANNEL POWER MOSFET

Harris Corporation
37,562 -

RFQ

IRF244

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDAF75N28

FDAF75N28

MOSFET N-CH 280V 46A TO3PF

Fairchild Semiconductor
1,291 -

RFQ

FDAF75N28

Scheda tecnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 280 V 46A (Tc) 10V 41mOhm @ 23A, 10V 5V @ 250µA 144 nC @ 10 V ±30V 6700 pF @ 25 V - 215W (Tc) -55°C ~ 150°C (TJ) Through Hole
BTS114AE3045A

BTS114AE3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
11,937 -

RFQ

BTS114AE3045A

Scheda tecnica

Bulk * Obsolete - - - - - - - - - - - - - -
BTS114A E3045A

BTS114A E3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
4,000 -

RFQ

BTS114A E3045A

Scheda tecnica

Bulk * Obsolete - - - - - - - - - - - - - -
FQAF40N25

FQAF40N25

MOSFET N-CH 250V 24A TO3PF

Fairchild Semiconductor
2,593 -

RFQ

FQAF40N25

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 24A (Tc) 10V 70mOhm @ 12A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4000 pF @ 25 V - 108W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK3712(1)-AZ

2SK3712(1)-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
1,169 -

RFQ

2SK3712(1)-AZ

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
2SK3712-AZ

2SK3712-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
1,092 -

RFQ

2SK3712-AZ

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
NTP165N65S3H

NTP165N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
762 -

RFQ

NTP165N65S3H

Scheda tecnica

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4V @ 1.6mA 35 nC @ 10 V ±30V 1808 pF @ 400 V - 142W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP11N80E-BE3

SIHP11N80E-BE3

N-CHANNEL 800V

Vishay Siliconix
958 -

RFQ

SIHP11N80E-BE3

Scheda tecnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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