Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
H5N3301LSTL-E

H5N3301LSTL-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IXTY1R6N100D2-TRL

IXTY1R6N100D2-TRL

MOSFET N-CH 1000V 1.6A TO252

IXYS
3,829 -

RFQ

Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tj) 0V 10Ohm @ 800mA, 0V 4.5V @ 100µA 27 nC @ 5 V ±20V 645 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK16V60W,LVQ

TK16V60W,LVQ

MOSFET N-CH 600V 15.8A 4DFN

Toshiba Semiconductor and Storage
2,303 -

RFQ

TK16V60W,LVQ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 139W (Tc) 150°C (TJ) Surface Mount
AOTF20N40L

AOTF20N40L

MOSFET N-CH 400V 20A TO220-3F

Alpha & Omega Semiconductor Inc.
2,027 -

RFQ

AOTF20N40L

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 20A (Tc) 10V 250mOhm @ 10A, 10V 4.3V @ 250µA 45 nC @ 10 V ±30V 2290 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS5C442NT3G

NTMFS5C442NT3G

MOSFET N-CH 40V 29A/140A 5DFN

onsemi
3,228 -

RFQ

NTMFS5C442NT3G

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 29A (Ta), 140A (Tc) 10V 2.3mOhm @ 50A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 2100 pF @ 25 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFIZ44GPBF

IRFIZ44GPBF

MOSFET N-CH 60V 30A TO220-3

Vishay Siliconix
2,057 -

RFQ

IRFIZ44GPBF

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 28mOhm @ 18A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2500 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHF18N50D-E3

SIHF18N50D-E3

MOSFET N-CH 500V 18A TO220

Vishay Siliconix
2,602 -

RFQ

SIHF18N50D-E3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 280mOhm @ 9A, 10V 5V @ 250µA 76 nC @ 10 V ±30V 1500 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF20N60

AOTF20N60

MOSFET N-CH 600V 20A TO220-3F

Alpha & Omega Semiconductor Inc.
2,840 -

RFQ

AOTF20N60

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 370mOhm @ 10A, 10V 4.5V @ 250µA 74 nC @ 10 V ±30V 3680 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF22N50

AOTF22N50

MOSFET N-CH 500V 22A TO220-3F

Alpha & Omega Semiconductor Inc.
2,395 -

RFQ

AOTF22N50

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 260mOhm @ 11A, 10V 4.5V @ 250µA 83 nC @ 10 V ±30V 3710 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC016N04LSGATMA1

BSC016N04LSGATMA1

MOSFET N-CH 40V 31A/100A TDSON

Infineon Technologies
3,453 -

RFQ

BSC016N04LSGATMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 100A (Tc) 4.5V, 10V 1.6mOhm @ 50A, 10V 2V @ 85µA 150 nC @ 10 V ±20V 12000 pF @ 20 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB90N04S402ATMA1

IPB90N04S402ATMA1

MOSFET N-CH 40V 90A D2PAK

Infineon Technologies
2,079 -

RFQ

IPB90N04S402ATMA1

Scheda tecnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 2.1mOhm @ 90A, 10V 4V @ 95µA 118 nC @ 10 V ±20V 9430 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPF041N10NF2SATMA1

IPF041N10NF2SATMA1

TRENCH >=100V

Infineon Technologies
2,036 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
AOWF15S65

AOWF15S65

MOSFET N-CH 650V 15A TO262F

Alpha & Omega Semiconductor Inc.
3,942 -

RFQ

AOWF15S65

Scheda tecnica

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 290mOhm @ 7.5A, 10V 4V @ 250µA 17.2 nC @ 10 V ±30V 841 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS4C302NWFT1G

NVMFS4C302NWFT1G

MOSFET N-CH 30V 43A/241A 5DFN

onsemi
3,602 -

RFQ

NVMFS4C302NWFT1G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 43A (Ta), 241A (Tc) 4.5V, 10V 1.15mOhm @ 30A, 10V 2.2V @ 250µA 82 nC @ 10 V ±20V 5780 pF @ 15 V - 3.75W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOD380A60

AOD380A60

MOSFET N-CH 600V 11A TO252

Alpha & Omega Semiconductor Inc.
2,186 -

RFQ

AOD380A60

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 955 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK2935-91-E

2SK2935-91-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,149 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK2935-93-E

2SK2935-93-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,032 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDB6030BL

FDB6030BL

MOSFET N-CH 30V 40A R-6

Fairchild Semiconductor
82,680 -

RFQ

FDB6030BL

Scheda tecnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 18mOhm @ 20A, 10V 3V @ 250µA 17 nC @ 5 V ±20V 1160 pF @ 15 V - 60W (Tc) -65°C ~ 175°C (TJ) Surface Mount
RJL5013DPP-00#T2

RJL5013DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,536 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK3109-AZ

2SK3109-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
4,900 -

RFQ

2SK3109-AZ

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente