Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB60R090CFD7ATMA1

IPB60R090CFD7ATMA1

MOSFET N-CH 650V 25A TO263-3-2

Infineon Technologies
1,000 -

RFQ

IPB60R090CFD7ATMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 90mOhm @ 11.4A, 10V 4.5V @ 570µA 51 nC @ 10 V ±20V 2103 pF @ 400 V - 124W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3805PBF

IRF3805PBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
2,000 -

RFQ

IRF3805PBF

Scheda tecnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP19NM50N

STP19NM50N

MOSFET N-CH 500V 14A TO220AB

STMicroelectronics
996 -

RFQ

STP19NM50N

Scheda tecnica

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 250mOhm @ 7A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 1000 pF @ 50 V - 110W (Tc) 150°C (TJ) Through Hole
IRF5210LPBF

IRF5210LPBF

MOSFET P-CH 100V 38A TO262

Infineon Technologies
3,897 -

RFQ

IRF5210LPBF

Scheda tecnica

Tube HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK753R1-40E,127

BUK753R1-40E,127

MOSFET N-CH 40V 100A TO220AB

Nexperia USA Inc.
2,090 -

RFQ

BUK753R1-40E,127

Scheda tecnica

Bulk,Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 25A, 10V 4V @ 1mA 79 nC @ 10 V ±20V 6200 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
R5007ANJTL

R5007ANJTL

MOSFET N-CH 500V 7A LPTS

Rohm Semiconductor
2,759 -

RFQ

R5007ANJTL

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 7A (Ta) 10V 1.05Ohm @ 3.5A, 10V 4.5V @ 1mA 13 nC @ 10 V ±30V 500 pF @ 25 V - 40W (Tc) 150°C (TJ) Surface Mount
FDPF035N06B-F154

FDPF035N06B-F154

MOSFET N-CH 60V 88A TO220F

onsemi
3,528 -

RFQ

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 88A (Tc) - 3.5mOhm @ 88A, 10V 4V @ 250µA 99 nC @ 10 V ±20V 8030 pF @ 30 V - 46.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S405AKSA2

IPI80N06S405AKSA2

MOSFET N-CHANNEL_55/60V

Infineon Technologies
3,000 -

RFQ

IPI80N06S405AKSA2

Scheda tecnica

Tube,Tube * Active - - - - - - - - - - - - - -
FCPF400N80ZL1-F154

FCPF400N80ZL1-F154

MOSFET N-CH 800V 11A TO220F-3

onsemi
3,359 -

RFQ

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tj) - 400mOhm @ 5.5A, 10V 4.5V @ 1.1mA 56 nC @ 10 V ±20V 2350 pF @ 100 V - 35.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOB7S65L

AOB7S65L

MOSFET N-CH 650V 7A TO263

Alpha & Omega Semiconductor Inc.
2,215 -

RFQ

AOB7S65L

Scheda tecnica

Tape & Reel (TR) aMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 650mOhm @ 3.5A, 10V 4V @ 250µA 9.2 nC @ 10 V ±30V 434 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOT20N60L

AOT20N60L

MOSFET N-CH 600V 20A TO220

Alpha & Omega Semiconductor Inc.
2,994 -

RFQ

AOT20N60L

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 370mOhm @ 10A, 10V 4.5V @ 250µA 74 nC @ 10 V ±30V 3680 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
NP60N055VUK-E1-AY

NP60N055VUK-E1-AY

MOSFET N-CH 55V 60A TO252-3

Renesas Electronics America Inc
2,327 -

RFQ

NP60N055VUK-E1-AY

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 5.5mOhm @ 30A, 10V 4V @ 253µA 63 nC @ 10 V ±20V 3750 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C (TJ) Surface Mount
FCPF260N65FL1-F154

FCPF260N65FL1-F154

MOSFET N-CH 650V 15A TO220F-3

onsemi
2,654 -

RFQ

Tube FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) - 260mOhm @ 7.5A, 10V 5V @ 1.5mA 60 nC @ 10 V ±20V 2340 pF @ 100 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTD5C464NT4G

NTD5C464NT4G

MOSFET N-CH 40V 19A/59A DPAK

onsemi
2,288 -

RFQ

NTD5C464NT4G

Scheda tecnica

Tape & Reel (TR) - Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 59A (Tc) 10V 5.8mOhm @ 30A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 1200 pF @ 20 V - 4W (Ta), 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF190N60-F154

FCPF190N60-F154

MOSFET N-CH 600V 20.2A TO220F-3

onsemi
3,479 -

RFQ

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tj) - 199mOhm @ 10A, 10V 3.5V @ 250µA 74 nC @ 10 V ±20V 2950 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK8A65W,S5X

TK8A65W,S5X

MOSFET N-CH 650V 7.8A TO220SIS

Toshiba Semiconductor and Storage
2,530 -

RFQ

TK8A65W,S5X

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 7.8A (Ta) 10V 650mOhm @ 3.9A, 10V 3.5V @ 300µA 16 nC @ 10 V ±30V 570 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
DMT4005SCT

DMT4005SCT

MOSFET N-CH 40V 100A TO220AB

Diodes Incorporated
2,213 -

RFQ

DMT4005SCT

Scheda tecnica

Tube Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.7mOhm @ 50A, 10V 4V @ 250µA 49.1 nC @ 10 V ±20V 3062 pF @ 20 V - 2.3W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMT6005LCT

DMT6005LCT

MOSFET N-CH 60V 100A TO220AB

Diodes Incorporated
3,476 -

RFQ

DMT6005LCT

Scheda tecnica

Tube Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 3V @ 250µA 47.1 nC @ 10 V ±20V 2962 pF @ 30 V - 2.3W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM035NB04CZ

TSM035NB04CZ

MOSFET N-CH 40V 18A/157A TO220

Taiwan Semiconductor Corporation
3,860 -

RFQ

TSM035NB04CZ

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 157A (Tc) - 3.5mOhm @ 18A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6990 pF @ 20 V - 2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB5645

FDB5645

MOSFET N-CH 60V 80A D2PAK

Fairchild Semiconductor
8,432 -

RFQ

FDB5645

Scheda tecnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 80A (Ta) 6V, 10V 9.5mOhm @ 40A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 4468 pF @ 30 V - 125W (Tc) -65°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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