Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK56E12N1,S1X

TK56E12N1,S1X

MOSFET N CH 120V 56A TO-220

Toshiba Semiconductor and Storage
2,775 -

RFQ

TK56E12N1,S1X

Scheda tecnica

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 56A (Ta) 10V 7mOhm @ 28A, 10V 4V @ 1mA 69 nC @ 10 V ±20V 4200 pF @ 60 V - 168W (Tc) 150°C (TJ) Through Hole
NVMFS5C426NAFT3G

NVMFS5C426NAFT3G

MOSFET N-CH 40V 41A/235A 5DFN

onsemi
3,486 -

RFQ

NVMFS5C426NAFT3G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 235A (Tc) 10V 1.3mOhm @ 50A, 10V 3.5V @ 250µA 65 nC @ 10 V ±20V 4300 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOV15S60

AOV15S60

MOSFET N-CH 600V 520MA/12A 4DFN

Alpha & Omega Semiconductor Inc.
3,103 -

RFQ

AOV15S60

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 520mA (Ta), 12A (Tc) 10V 360mOhm @ 7.5A, 10V 3.8V @ 250µA 15.6 nC @ 10 V ±30V 717 pF @ 100 V - 8.3W (Ta), 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD90N10S406ATMA1

IPD90N10S406ATMA1

MOSFET N-CH 100V 90A TO252-3

Infineon Technologies
3,056 -

RFQ

IPD90N10S406ATMA1

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 6.7mOhm @ 90A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4870 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP18N60DM2

STP18N60DM2

MOSFET N-CH 600V 12A TO220

STMicroelectronics
3,971 -

RFQ

STP18N60DM2

Scheda tecnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 295mOhm @ 6A, 10V 5V @ 250µA 20 nC @ 10 V ±25V 800 pF @ 100 V - 90W (Tc) 150°C (TJ) Through Hole
SI7788DP-T1-GE3

SI7788DP-T1-GE3

MOSFET N-CH 30V 50A PPAK SO-8

Vishay Siliconix
2,688 -

RFQ

SI7788DP-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 3.1mOhm @ 15A, 10V 2.5V @ 250µA 125 nC @ 10 V ±20V 5370 pF @ 15 V - 5.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK6A65W,S5X

TK6A65W,S5X

MOSFET N-CH 650V 5.8A TO220SIS

Toshiba Semiconductor and Storage
3,526 -

RFQ

TK6A65W,S5X

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 5.8A (Ta) 10V 1Ohm @ 2.9A, 10V 3.5V @ 180µA 11 nC @ 10 V ±30V 390 pF @ 300 V - 30W (Tc) 150°C (TJ) Through Hole
SQM25N15-52_GE3

SQM25N15-52_GE3

MOSFET N-CH 150V 25A TO263

Vishay Siliconix
3,566 -

RFQ

SQM25N15-52_GE3

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 25A (Tc) 10V 52mOhm @ 15A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 2360 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQP25N15-52_GE3

SQP25N15-52_GE3

MOSFET N-CH 150V 25A TO220AB

Vishay Siliconix
3,252 -

RFQ

SQP25N15-52_GE3

Scheda tecnica

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 150 V 25A (Tc) 10V 52mOhm @ 15A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 2360 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQP50P03-07_GE3

SQP50P03-07_GE3

MOSFET P-CH 30V 50A TO220AB

Vishay Siliconix
3,561 -

RFQ

SQP50P03-07_GE3

Scheda tecnica

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 2.5V @ 250µA 155 nC @ 10 V ±20V 5380 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBF20STRRPBF

IRFBF20STRRPBF

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix
2,049 -

RFQ

IRFBF20STRRPBF

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ34STRLPBF

IRFZ34STRLPBF

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
3,563 -

RFQ

IRFZ34STRLPBF

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBF20STRLPBF

IRFBF20STRLPBF

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix
3,667 -

RFQ

IRFBF20STRLPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STU2N95K5

STU2N95K5

MOSFET N-CH 950V 2A IPAK

STMicroelectronics
2,350 -

RFQ

STU2N95K5

Scheda tecnica

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 2A (Tc) 10V 5Ohm @ 1A, 10V 5V @ 100µA 10 nC @ 10 V 30V 105 pF @ 100 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ24STRRPBF

IRFZ24STRRPBF

MOSFET N-CH 60V 17A TO263

Vishay Siliconix
3,645 -

RFQ

IRFZ24STRRPBF

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STU9N60M2

STU9N60M2

MOSFET N-CH 600V 5.5A IPAK

STMicroelectronics
3,225 -

RFQ

STU9N60M2

Scheda tecnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 780mOhm @ 3A, 10V 4V @ 250µA 10 nC @ 10 V ±25V 320 pF @ 100 V - 60W (Tc) 150°C (TJ) Through Hole
IRFZ24STRLPBF

IRFZ24STRLPBF

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
3,191 -

RFQ

IRFZ24STRLPBF

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFD4952NFT1G

NTMFD4952NFT1G

MOSFET N-CH 30V 10.8A 8DFN DL

onsemi
2,281 -

RFQ

Tape & Reel (TR) - Last Time Buy - - - - - - - - - - - - - Surface Mount
H5N2307LSTL-E

H5N2307LSTL-E

30A, 230V, 0.052OHM, N CHANNEL M

Renesas Electronics America Inc
21,000 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
2SK3668-ZK-E1-AY

2SK3668-ZK-E1-AY

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
20,800 -

RFQ

2SK3668-ZK-E1-AY

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente