Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
4AM17-91

4AM17-91

POWER N AND P CHANNEL MOSFETS

Renesas Electronics America Inc
38,792 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
H5N2513PL-E

H5N2513PL-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,189 -

RFQ

H5N2513PL-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IXFK40N90P

IXFK40N90P

MOSFET N-CH 900V 40A TO264AA

IXYS
270 -

RFQ

IXFK40N90P

Scheda tecnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 40A (Tc) 10V 230mOhm @ 20A, 10V 6.5V @ 1mA 230 nC @ 10 V ±30V 14000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
H5N5011PL-E

H5N5011PL-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,435 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UF4SC120023K4S

UF4SC120023K4S

1200V/23MOHM SIC STACKED FAST CA

UnitedSiC
574 -

RFQ

UF4SC120023K4S

Scheda tecnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 53A (Tc) 12V 29mOhm @ 40A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1430 pF @ 800 V - 385W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTE2392

NTE2392

MOSFET N-CHANNEL 100V 40A TO3

NTE Electronics, Inc
936 -

RFQ

NTE2392

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 55mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
TW030N120C,S1F

TW030N120C,S1F

G3 1200V SIC-MOSFET TO-247 30MO

Toshiba Semiconductor and Storage
175 -

RFQ

TW030N120C,S1F

Scheda tecnica

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 60A (Tc) 18V 40mOhm @ 30A, 18V 5V @ 13mA 82 nC @ 18 V +25V, -10V 2925 pF @ 800 V - 249W (Tc) 175°C Through Hole
IXTX240N075L2

IXTX240N075L2

MOSFET N-CH 75V 240A PLUS247-3

IXYS
280 -

RFQ

IXTX240N075L2

Scheda tecnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) 10V 7mOhm @ 120A, 10V 4.5V @ 3mA 546 nC @ 10 V ±20V 19000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
4AK17-91

4AK17-91

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
29,649 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
MRF9030GMR1

MRF9030GMR1

30W RF PWR FET TO270GULL

Freescale Semiconductor
500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HF9969-91

HF9969-91

AUTOMOTIVE POWER MOSFET

Renesas Electronics America Inc
2,400 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IMW120R020M1HXKSA1

IMW120R020M1HXKSA1

SIC DISCRETE

Infineon Technologies
3,455 -

RFQ

IMW120R020M1HXKSA1

Scheda tecnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 98A (Tc) 15V, 18V 26.9mOhm @ 41A, 18V 5.2V @ 17.6mA 83 nC @ 18 V +20V, -5V 3460 nF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1971-E

2SK1971-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,331 -

RFQ

2SK1971-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
IPI50N10S3L16AKSA1

IPI50N10S3L16AKSA1

MOSFET N-CH 100V 50A TO262-3

Infineon Technologies
10,000 -

RFQ

IPI50N10S3L16AKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 4.5V, 10V 15.7mOhm @ 50A, 10V 2.4V @ 60µA 64 nC @ 10 V ±20V 4180 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80P04P405ATMA1

IPB80P04P405ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
2,077 -

RFQ

IPB80P04P405ATMA1

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.9mOhm @ 80A, 10V 4V @ 250µA 151 nC @ 10 V ±20V 10300 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80P04P4L04ATMA1

IPB80P04P4L04ATMA1

MOSFET P-CH 40V 80A TO263-3

Infineon Technologies
2,553 -

RFQ

IPB80P04P4L04ATMA1

Scheda tecnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2.2V @ 250µA 176 nC @ 10 V ±16V 3800 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMN6010SCTB-13

DMN6010SCTB-13

MOSFET BVDSS: 41V~60V TO263 T&R

Diodes Incorporated
2,533 -

RFQ

DMN6010SCTB-13

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 128A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 46 nC @ 10 V ±20V 2692 pF @ 25 V - 5W (Ta), 312W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMNH6010SCTB-13

DMNH6010SCTB-13

MOSFET BVDSS: 41V~60V TO263 T&R

Diodes Incorporated
3,007 -

RFQ

DMNH6010SCTB-13

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 133A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 46 nC @ 10 V ±20V 2692 pF @ 25 V - 5W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL7434PBF

IRFSL7434PBF

MOSFET N-CH 40V 195A TO262

Infineon Technologies
3,436 -

RFQ

IRFSL7434PBF

Scheda tecnica

Tube HEXFET®, StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V ±20V 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB65R225C7ATMA2

IPB65R225C7ATMA2

MOSFET N-CH 650V 11A TO263-3

Infineon Technologies
2,158 -

RFQ

IPB65R225C7ATMA2

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 225mOhm @ 4.8A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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