Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IMW65R030M1HXKSA1

IMW65R030M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
131 -

RFQ

IMW65R030M1HXKSA1

Scheda tecnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 58A (Tc) 18V 42mOhm @ 29.5A, 18V 5.7V @ 8.8mA 48 nC @ 18 V +20V, -2V 1643 pF @ 400 V - 197W (Tc) -55°C ~ 175°C (TJ) Through Hole
TW027N65C,S1F

TW027N65C,S1F

G3 650V SIC-MOSFET TO-247 27MOH

Toshiba Semiconductor and Storage
180 -

RFQ

TW027N65C,S1F

Scheda tecnica

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 58A (Tc) 18V 37mOhm @ 29A, 18V 5V @ 3mA 65 nC @ 18 V +25V, -10V 2288 pF @ 400 V - 156W (Tc) 175°C Through Hole
IMZA65R030M1HXKSA1

IMZA65R030M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
200 -

RFQ

IMZA65R030M1HXKSA1

Scheda tecnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 53A (Tc) 18V 42mOhm @ 29.5A, 18V 5.7V @ 8.8mA 48 nC @ 18 V +20V, -2V 1643 pF @ 400 V - 197W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP9NK65ZFP

STP9NK65ZFP

MOSFET N-CH 650V 6.4A TO220FP

STMicroelectronics
3,081 -

RFQ

STP9NK65ZFP

Scheda tecnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 650 V 6.4A (Tc) 10V 1.2Ohm @ 3.2A, 10V 4.5V @ 100µA 41 nC @ 10 V ±30V 1145 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP15NK50Z

STP15NK50Z

MOSFET N-CH 500V 14A TO220AB

STMicroelectronics
3,469 -

RFQ

STP15NK50Z

Scheda tecnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 340mOhm @ 7A, 10V 4.5V @ 100µA 106 nC @ 10 V ±30V 2260 pF @ 25 V - 160W (Tc) -50°C ~ 150°C (TJ) Through Hole
2SJ673-AZ

2SJ673-AZ

MOSFET P-CH 60V 36A TO220

Renesas Electronics America Inc
3,757 -

RFQ

2SJ673-AZ

Scheda tecnica

Bulk - Last Time Buy P-Channel MOSFET (Metal Oxide) 60 V 36A (Tc) 4V, 10V 20mOhm @ 18A, 10V - 87 nC @ 10 V ±20V 4600 pF @ 10 V - 2W (Ta), 32W (Tc) 150°C (TJ) Through Hole
IPI65R380C6XKSA1

IPI65R380C6XKSA1

MOSFET N-CH 650V 10.6A TO262-3

Infineon Technologies
2,378 -

RFQ

IPI65R380C6XKSA1

Scheda tecnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMYS2D2N06CLTWG

NVMYS2D2N06CLTWG

MOSFET N-CH 60V 31A/185A LFPAK4

onsemi
2,618 -

RFQ

NVMYS2D2N06CLTWG

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 31A (Ta), 185A (Tc) 4.5V, 10V 1.9mOhm @ 50A, 10V 2V @ 180µA 69 nC @ 10 V ±20V 4850 pF @ 25 V - 3.9W (Ta), 134W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA65R380C6XKSA1

IPA65R380C6XKSA1

MOSFET N-CH 650V 10.6A TO220

Infineon Technologies
3,956 -

RFQ

IPA65R380C6XKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80P03P405ATMA2

IPB80P03P405ATMA2

MOSFET_(20V 40V) PG-TO263-3

Infineon Technologies
3,925 -

RFQ

IPB80P03P405ATMA2

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 4.7mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHH11N60E-T1-GE3

SIHH11N60E-T1-GE3

MOSFET N-CH 600V 11A PPAK 8 X 8

Vishay Siliconix
3,760 -

RFQ

SIHH11N60E-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 339mOhm @ 5.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1076 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7434DP-T1-E3

SI7434DP-T1-E3

MOSFET N-CH 250V 2.3A PPAK SO-8

Vishay Siliconix
3,021 -

RFQ

SI7434DP-T1-E3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 250 V 2.3A (Ta) 6V, 10V 155mOhm @ 3.8A, 10V 4V @ 250µA 50 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4442DY-T1-GE3

SI4442DY-T1-GE3

MOSFET N-CH 30V 15A 8SO

Vishay Siliconix
3,829 -

RFQ

SI4442DY-T1-GE3

Scheda tecnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 2.5V, 10V 4.5mOhm @ 22A, 10V 1.5V @ 250µA 50 nC @ 4.5 V ±12V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPB80N06S08ATMA1

SPB80N06S08ATMA1

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,079 -

RFQ

SPB80N06S08ATMA1

Scheda tecnica

Tape & Reel (TR) SIPMOS® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 7.7mOhm @ 80A, 10V 4V @ 240µA 187 nC @ 10 V ±20V 3660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB60R280CFD7ATMA1

IPB60R280CFD7ATMA1

MOSFET N-CH 650V 9A TO263-3-2

Infineon Technologies
2,909 -

RFQ

IPB60R280CFD7ATMA1

Scheda tecnica

Tape & Reel (TR) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 280mOhm @ 3.6A, 10V 4.5V @ 180µA 18 nC @ 10 V ±20V 807 pF @ 400 V - 51W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMNH6010SCTBQ-13

DMNH6010SCTBQ-13

MOSFET BVDSS: 41V~60V TO263 T&R

Diodes Incorporated
2,309 -

RFQ

DMNH6010SCTBQ-13

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 133A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 46 nC @ 10 V ±20V 2692 pF @ 25 V - 5W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMN6010SCTBQ-13

DMN6010SCTBQ-13

MOSFET BVDSS: 41V~60V TO263 T&R

Diodes Incorporated
2,819 -

RFQ

DMN6010SCTBQ-13

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 128A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 46 nC @ 10 V ±20V 2692 pF @ 25 V - 5W (Ta), 312W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFN8405TR

AUIRFN8405TR

MOSFET N-CH 40V 95A PQFN

Infineon Technologies
3,166 -

RFQ

AUIRFN8405TR

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 10V 2mOhm @ 50A, 10V 3.9V @ 100µA 117 nC @ 10 V ±20V 5142 pF @ 25 V - 3.3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQP120N06-6M7_GE3

SQP120N06-6M7_GE3

MOSFET N-CH 60V TO220AB

Vishay Siliconix
3,375 -

RFQ

Tube - Last Time Buy - - - 119A (Tc) - - - - - - - - - Through Hole
SI7374DP-T1-E3

SI7374DP-T1-E3

MOSFET N-CH 30V 24A PPAK SO-8

Vishay Siliconix
3,377 -

RFQ

SI7374DP-T1-E3

Scheda tecnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 5.5mOhm @ 23.8A, 10V 2.8V @ 250µA 122 nC @ 10 V ±20V 5500 pF @ 15 V - 5W (Ta), 56W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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