Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UJ4C075044K3S

UJ4C075044K3S

750V/44MOHM, SIC, CASCODE, G4, T

UnitedSiC
264 -

RFQ

UJ4C075044K3S

Scheda tecnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 37.4A (Tc) 12V 56mOhm @ 25A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 203W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT60N60X3HV

IXFT60N60X3HV

MOSFET ULTRA 600V 60A TO268HV

IXYS
318 -

RFQ

IXFT60N60X3HV

Scheda tecnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 51mOhm @ 30A, 10V 5V @ 4mA 51 nC @ 10 V ±20V 3450 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH54N65X3

IXFH54N65X3

MOSFET 54A 650V X3 TO247

IXYS
480 -

RFQ

IXFH54N65X3

Scheda tecnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 59mOhm @ 27A, 10V 5.2V @ 4mA 49 nC @ 10 V ±20V 3360 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL060N065SC1

NTHL060N065SC1

SIC MOS TO247-3L 650V

onsemi
450 -

RFQ

NTHL060N065SC1

Scheda tecnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 47A (Tc) 15V, 18V 70mOhm @ 20A, 18V 4.3V @ 6.5mA 74 nC @ 18 V +22V, -8V 1473 pF @ 325 V - 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFA72N20X3

IXFA72N20X3

MOSFET N-CH 200V 72A TO263AA

IXYS
148 -

RFQ

IXFA72N20X3

Scheda tecnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 20mOhm @ 36A, 10V 4.5V @ 1.5mA 55 nC @ 10 V ±20V 3780 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STW56N65DM2

STW56N65DM2

MOSFET N-CH 650V 48A TO247

STMicroelectronics
570 -

RFQ

STW56N65DM2

Scheda tecnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 48A (Tc) 10V 65mOhm @ 24A, 10V 5V @ 250µA 88 nC @ 10 V ±25V 4100 pF @ 100 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTH4L060N090SC1

NTH4L060N090SC1

SILICON CARBIDE MOSFET, NCHANNEL

onsemi
285 -

RFQ

NTH4L060N090SC1

Scheda tecnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 900 V 46A (Tc) 15V, 18V 43mOhm @ 20A, 18V 4.3V @ 5mA 87 nC @ 15 V +22V, -8V 1770 pF @ 450 V - 221W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMW65R083M1HXKSA1

IMW65R083M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
162 -

RFQ

IMW65R083M1HXKSA1

Scheda tecnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 24A (Tc) 18V 111mOhm @ 11.2A, 18V 5.7V @ 3.3mA 19 nC @ 18 V +20V, -2V 624 pF @ 400 V - 104W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTT10P60

IXTT10P60

MOSFET P-CH 600V 10A TO268

IXYS
240 -

RFQ

IXTT10P60

Scheda tecnica

Tube - Active P-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 1Ohm @ 5A, 10V 5V @ 250µA 160 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UJ4C075044K4S

UJ4C075044K4S

750V/44MOHM, SIC, CASCODE, G4, T

UnitedSiC
515 -

RFQ

UJ4C075044K4S

Scheda tecnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 37.4A (Tc) 12V 56mOhm @ 25A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 203W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH60N20X4

IXTH60N20X4

MOSFET ULTRA X4 200V 60A TO-247

IXYS
497 -

RFQ

IXTH60N20X4

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 21mOhm @ 30A, 10V 4.5V @ 250µA 33 nC @ 10 V ±20V 2450 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH60N65X2-4

IXFH60N65X2-4

MOSFET N-CH 650V 60A TO247-4L

IXYS
277 -

RFQ

IXFH60N65X2-4

Scheda tecnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) 10V 52mOhm @ 30A, 10V 5V @ 4mA 108 nC @ 10 V ±30V 6300 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVH4L060N090SC1

NVH4L060N090SC1

-

onsemi
450 -

RFQ

Tube - Active - - - - - - - - - - - - - -
DMP58D0LFB-7

DMP58D0LFB-7

MOSFET P-CH 50V 180MA 3DFN

Diodes Incorporated
27,700 -

RFQ

DMP58D0LFB-7

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 180mA (Ta) 2.5V, 5V 8Ohm @ 100mA, 5V 2.1V @ 250µA - ±20V 27 pF @ 25 V - 470mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30SPBF

IRFBC30SPBF

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
2,189 -

RFQ

IRFBC30SPBF

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840LPBF

IRF840LPBF

MOSFET N-CH 500V 8A TO263AB

Vishay Siliconix
3,202 -

RFQ

IRF840LPBF

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP150A

IRFP150A

MOSFET N-CH 100V 43A TO3PN

onsemi
3,443 -

RFQ

IRFP150A

Scheda tecnica

Tube - Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 43A (Tc) 10V 40mOhm @ 21.5A, 10V 4V @ 250µA 97 nC @ 10 V - 2270 pF @ 25 V - 193W (Tc) -55°C ~ 175°C (TJ) Through Hole
TSM35N10CP ROG

TSM35N10CP ROG

MOSFET N-CHANNEL 100V 32A TO252

Taiwan Semiconductor Corporation
3,608 -

RFQ

TSM35N10CP ROG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 4.5V, 10V 37mOhm @ 10A, 10V 3V @ 250µA 34 nC @ 10 V ±20V 1598 pF @ 30 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY32P05T-TRL

IXTY32P05T-TRL

MOSFET P-CH 50V 32A TO252

IXYS
3,711 -

RFQ

Tape & Reel (TR) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 32A (Tc) 10V 39mOhm @ 16A, 10V 4.5V @ 250µA 46 nC @ 10 V ±15V 1975 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM100N04-2M7_GE3

SQM100N04-2M7_GE3

MOSFET N-CH 40V 100A TO263

Vishay Siliconix
3,732 -

RFQ

SQM100N04-2M7_GE3

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.7mOhm @ 30A, 10V 3.5V @ 250µA 145 nC @ 10 V ±20V 7910 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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