Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK762R6-60E,118

BUK762R6-60E,118

MOSFET N-CH 60V 120A D2PAK

Nexperia USA Inc.
3,948 -

RFQ

BUK762R6-60E,118

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10170 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMJ65H650SCTI

DMJ65H650SCTI

MOSFET N-CH 650V 10A ITO220AB

Diodes Incorporated
3,256 -

RFQ

DMJ65H650SCTI

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 600mOhm @ 2.4A, 10V 4V @ 250µA 12.9 nC @ 10 V ±30V 639 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD65R420CFDAATMA1

IPD65R420CFDAATMA1

MOSFET N-CH 650V 8.7A TO252-3

Infineon Technologies
2,437 -

RFQ

IPD65R420CFDAATMA1

Scheda tecnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 345µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NTPF150N65S3HF

NTPF150N65S3HF

MOSFET N-CH 650V 24A TO220FP

onsemi
2,416 -

RFQ

NTPF150N65S3HF

Scheda tecnica

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 540µA 43 nC @ 10 V ±30V 1985 pF @ 400 V - 192W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM10NC60CF C0G

TSM10NC60CF C0G

MOSFET N-CH 600V 10A ITO220S

Taiwan Semiconductor Corporation
2,769 -

RFQ

TSM10NC60CF C0G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 2.5A, 10V 4.5V @ 250µA 33 nC @ 10 V ±30V 1652 pF @ 50 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR3710ZTRL

AUIRFR3710ZTRL

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
2,598 -

RFQ

AUIRFR3710ZTRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V - 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM50N04-4M1_GE3

SQM50N04-4M1_GE3

MOSFET N-CH 40V 50A TO263

Vishay Siliconix
3,430 -

RFQ

SQM50N04-4M1_GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 4.1mOhm @ 30A, 10V 3.5V @ 250µA 105 nC @ 10 V ±20V 6715 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP77N06S212AKSA2

IPP77N06S212AKSA2

MOSFET N-CH 55V 77A TO220-3

Infineon Technologies
2,681 -

RFQ

IPP77N06S212AKSA2

Scheda tecnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 12mOhm @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V 1770 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL7734PBF

IRFSL7734PBF

MOSFET N-CH 75V 183A TO262

Infineon Technologies
3,612 -

RFQ

IRFSL7734PBF

Scheda tecnica

Bulk,Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10150 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP047N08-F102

FDP047N08-F102

MOSFET N-CH 75V 164A TO220-3

onsemi
2,017 -

RFQ

Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 75 V 164A (Tc) 10V 4.7Ohm @ 80A, 10V 4.5V @ 250µA 152 nC @ 10 V ±20V 9415 pF @ 25 V - 268W (Tc) -55°C ~ 175°C (TJ) Through Hole
TSM60NB600CH C5G

TSM60NB600CH C5G

MOSFET N-CHANNEL 600V 7A TO251

Taiwan Semiconductor Corporation
3,248 -

RFQ

TSM60NB600CH C5G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 2.1A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 516 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG65R048M1HXTMA1

IMBG65R048M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
1,000 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
2SK2371(2)-A

2SK2371(2)-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
21,569 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UJ4C075033K3S

UJ4C075033K3S

750V/33MOHM, SIC, CASCODE, G4, T

UnitedSiC
1,272 -

RFQ

UJ4C075033K3S

Scheda tecnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 47A (Tc) 12V 41mOhm @ 30A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1400 pF @ 400 V - 242W (Tc) -55°C ~ 175°C (TJ) Through Hole
C3M0120090D

C3M0120090D

SICFET N-CH 900V 23A TO247-3

Wolfspeed, Inc.
3,492 -

RFQ

C3M0120090D

Scheda tecnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 23A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 17.3 nC @ 15 V +18V, -8V 414 pF @ 600 V - 97W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT24P20

IXTT24P20

MOSFET P-CH 200V 24A TO268

IXYS
267 -

RFQ

IXTT24P20

Scheda tecnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 110mOhm @ 500mA, 10V 5V @ 250µA 150 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXKH35N60C5

IXKH35N60C5

MOSFET N-CH 600V 35A TO247AD

IXYS
3,325 -

RFQ

IXKH35N60C5

Scheda tecnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 100mOhm @ 18A, 10V 3.9V @ 1.2mA 70 nC @ 10 V ±20V 2800 pF @ 100 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
2SK2595AXTB-E

2SK2595AXTB-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
13,000 -

RFQ

2SK2595AXTB-E

Scheda tecnica

Bulk * Active - - - - - - - - - - - - - -
TW140N120C,S1F

TW140N120C,S1F

G3 1200V SIC-MOSFET TO-247 140M

Toshiba Semiconductor and Storage
105 -

RFQ

TW140N120C,S1F

Scheda tecnica

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 20A (Tc) 18V 182mOhm @ 10A, 18V 5V @ 1mA 24 nC @ 18 V +25V, -10V 691 pF @ 800 V - 107W (Tc) 175°C Through Hole
NTE2376

NTE2376

MOSFET N-CHANNEL 200V 30A TO247

NTE Electronics, Inc
1,844 -

RFQ

NTE2376

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 10V 85mOhm @ 18A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2800 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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