Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTE2922

NTE2922

MOSFET N-CHANNEL 400V 16A TO3P

NTE Electronics, Inc
737 -

RFQ

NTE2922

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 16A (Tc) 10V 300mOhm @ 8.9A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR4104TRL

AUIRFR4104TRL

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
2,118 -

RFQ

AUIRFR4104TRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) - 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V - 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOTF260L

AOTF260L

MOSFET N-CH 60V 19A/92A TO220-3F

Alpha & Omega Semiconductor Inc.
3,396 -

RFQ

AOTF260L

Scheda tecnica

Tube - Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 19A (Ta), 92A (Tc) 6V, 10V 2.6mOhm @ 20A, 10V 3.2V @ 250µA 210 nC @ 10 V ±20V 11800 pF @ 30 V - 1.9W (Ta), 46.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA320N20NM3SXKSA1

IPA320N20NM3SXKSA1

MOSFET N-CH 200V 26A TO220

Infineon Technologies
2,628 -

RFQ

IPA320N20NM3SXKSA1

Scheda tecnica

Tube OptiMOS™3 Active N-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 10V 32mOhm @ 26A, 10V 4V @ 89µA 30 nC @ 10 V ±20V 2300 pF @ 100 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTMYS2D9N04CLTWG

NTMYS2D9N04CLTWG

MOSFET N-CH 40V 27A/110A 4LFPAK

onsemi
2,950 -

RFQ

NTMYS2D9N04CLTWG

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 110A (Tc) 4.5V, 10V 2.8mOhm @ 40A, 10V 2V @ 11µA 35 nC @ 10 V ±20V 2100 pF @ 20 V - 3.7W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOW292

AOW292

MOSFET N-CH 100V 105A TO262

Alpha & Omega Semiconductor Inc.
2,868 -

RFQ

AOW292

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 14.5A (Ta), 105A (Tc) 10V 4.1mOhm @ 20A, 10V 3.4V @ 250µA 126 nC @ 10 V ±20V 6775 pF @ 50 V - 1.9W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVB260N65S3

NVB260N65S3

SF3 650V EASY 260MOHM D2PAK AUTO

onsemi
3,490 -

RFQ

NVB260N65S3

Scheda tecnica

Tape & Reel (TR) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 260mOhm @ 6A, 10V 4.5V @ 290µA 24 nC @ 10 V ±30V 1010 pF @ 400 V - 90W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SKP253VR

SKP253VR

MOSFET N-CH 250V 20A TO263-3

Sanken
2,844 -

RFQ

SKP253VR

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 20A (Ta) 10V 95mOhm @ 10A, 10V 4.5V @ 1mA - ±30V 1600 pF @ 25 V - 40W (Tc) 150°C (TJ) Surface Mount
PSMN005-75P,127

PSMN005-75P,127

MOSFET N-CH 75V 75A TO220AB

Nexperia USA Inc.
3,751 -

RFQ

PSMN005-75P,127

Scheda tecnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 5mOhm @ 25A, 10V 4V @ 1mA 165 nC @ 10 V ±20V 8250 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP062NE7N3GXKSA1

IPP062NE7N3GXKSA1

MOSFET N-CH 75V 80A TO220-3

Infineon Technologies
2,221 -

RFQ

IPP062NE7N3GXKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 6.2mOhm @ 73A, 10V 3.8V @ 70µA 55 nC @ 10 V ±20V 3840 pF @ 37.5 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
R5016FNJTL

R5016FNJTL

MOSFET N-CH 500V 16A LPT

Rohm Semiconductor
816 -

RFQ

R5016FNJTL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) * Not For New Designs - - - - - - - - - - - - - -
NP36P06KDG-E1-AY

NP36P06KDG-E1-AY

MOSFET P-CH 60V 36A TO263

Renesas Electronics America Inc
3,855 -

RFQ

NP36P06KDG-E1-AY

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 36A (Tc) 4.5V, 10V 29.5mOhm @ 18A, 10V 2.5V @ 1mA 54 nC @ 10 V ±20V 3100 pF @ 10 V - 1.8W (Ta), 56W (Tc) 175°C (TJ) Surface Mount
AOW20S60

AOW20S60

MOSFET N-CH 600V 20A TO262

Alpha & Omega Semiconductor Inc.
2,611 -

RFQ

AOW20S60

Scheda tecnica

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 199mOhm @ 10A, 10V 4.1V @ 250µA 19.8 nC @ 10 V ±30V 1038 pF @ 100 V - 266W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOWF20S60

AOWF20S60

MOSFET N-CH 600V 20A TO262F

Alpha & Omega Semiconductor Inc.
3,489 -

RFQ

AOWF20S60

Scheda tecnica

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 199mOhm @ 10A, 10V 4.1V @ 250µA 19.8 nC @ 10 V ±30V 1038 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT292L

AOT292L

MOSFET N-CH 100V 105A TO220

Alpha & Omega Semiconductor Inc.
3,612 -

RFQ

AOT292L

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 14.5A (Ta), 105A (Tc) 6V, 10V 4.5mOhm @ 20A, 10V 3.4V @ 250µA 126 nC @ 10 V ±20V 6775 pF @ 50 V - 2.1W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOTF292L

AOTF292L

MOSFET N-CH 100V 70A TO220F

Alpha & Omega Semiconductor Inc.
3,593 -

RFQ

AOTF292L

Scheda tecnica

Tube AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 6V, 10V 4.5mOhm @ 20A, 10V 3.4V @ 250µA 126 nC @ 10 V ±20V 6775 pF @ 50 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOT380A60L

AOT380A60L

MOSFET N-CH 600V 11A TO220

Alpha & Omega Semiconductor Inc.
3,130 -

RFQ

AOT380A60L

Scheda tecnica

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 955 pF @ 100 V - 131W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK9A55DA(STA4,Q,M)

TK9A55DA(STA4,Q,M)

MOSFET N-CH 550V 8.5A TO220SIS

Toshiba Semiconductor and Storage
2,868 -

RFQ

TK9A55DA(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 8.5A (Ta) 10V 860mOhm @ 4.3A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
TK9A60D(STA4,Q,M)

TK9A60D(STA4,Q,M)

MOSFET N-CH 600V 9A TO220SIS

Toshiba Semiconductor and Storage
2,953 -

RFQ

TK9A60D(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Ta) 10V 830mOhm @ 4.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
VN1206L-G-P002

VN1206L-G-P002

MOSFET N-CH 120V 230MA TO92-3

Microchip Technology
2,162 -

RFQ

VN1206L-G-P002

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 120 V 230mA (Tj) 2.5V, 10V 6Ohm @ 500mA, 10V 2V @ 1mA - ±30V 125 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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