Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTHL050N65S3HF

NTHL050N65S3HF

MOSFET N-CH 650V 58A TO247-3

onsemi
896 -

RFQ

NTHL050N65S3HF

Scheda tecnica

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 50mOhm @ 29A, 10V 5V @ 1.7mA 125 nC @ 10 V ±30V 5017 pF @ 400 V - 378W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZA65R083M1HXKSA1

IMZA65R083M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
2,928 -

RFQ

IMZA65R083M1HXKSA1

Scheda tecnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 26A (Tc) 18V 111mOhm @ 11.2A, 18V 5.7V @ 3.3mA 19 nC @ 18 V +20V, -2V 624 pF @ 400 V - 104W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4410ZPBF

IRFSL4410ZPBF

MOSFET N-CH 100V 97A TO262

Infineon Technologies
2,389 -

RFQ

IRFSL4410ZPBF

Scheda tecnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA16N50-F109

FQA16N50-F109

MOSFET N-CH 500V 16A TO3P

onsemi
2,693 -

RFQ

Tube,Tube QFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 320mOhm @ 8A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 3000 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75639S3

HUF75639S3

MOSFET N-CH 100V 56A I2PAK

onsemi
2,300 -

RFQ

HUF75639S3

Scheda tecnica

Tube,Tube UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405STRRPBF

IRF1405STRRPBF

MOSFET N-CH 55V 131A D2PAK

Infineon Technologies
3,419 -

RFQ

IRF1405STRRPBF

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 131A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB160N04S4LH1ATMA1

IPB160N04S4LH1ATMA1

MOSFET N-CH 40V 160A TO263-7

Infineon Technologies
2,194 -

RFQ

IPB160N04S4LH1ATMA1

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 1.5mOhm @ 100A, 10V 2.2V @ 110µA 190 nC @ 10 V +20V, -16V 14950 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOB15S65L

AOB15S65L

MOSFET N-CH 650V 15A TO263

Alpha & Omega Semiconductor Inc.
2,716 -

RFQ

AOB15S65L

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 290mOhm @ 7.5A, 10V 4V @ 250µA 17.2 nC @ 10 V ±30V 841 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHF540STRL-GE3

SIHF540STRL-GE3

MOSFET N-CH 100V 28A D2PAK

Vishay Siliconix
2,997 -

RFQ

SIHF540STRL-GE3

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4838DY-T1-GE3

SI4838DY-T1-GE3

MOSFET N-CH 12V 17A 8SO

Vishay Siliconix
2,838 -

RFQ

SI4838DY-T1-GE3

Scheda tecnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 17A (Ta) 2.5V, 4.5V 3mOhm @ 25A, 4.5V 600mV @ 250µA (Min) 60 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHP18N60E-GE3

SIHP18N60E-GE3

MOSFET N-CH 600V 18A TO220AB

Vishay Siliconix
3,196 -

RFQ

SIHP18N60E-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 202mOhm @ 9A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF4C120070K3S

UF4C120070K3S

1200V/70MOHM, SIC, FAST CASCODE

UnitedSiC
585 -

RFQ

UF4C120070K3S

Scheda tecnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 27.5A (Tc) - 91mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1370 pF @ 800 V - 217W (Tc) -55°C ~ 175°C (TJ)
NVH4L040N65S3F

NVH4L040N65S3F

MOSFET N-CH 650V 65A TO247-4

onsemi
445 -

RFQ

NVH4L040N65S3F

Scheda tecnica

Tube Automotive, AEC-Q101, SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) - 40mOhm @ 32.5A, 10V 5V @ 2.1mA 160 nC @ 10 V ±30V 5665 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTE2920

NTE2920

MOSFET N-CHANNEL 60V 70A TO3P

NTE Electronics, Inc
363 -

RFQ

NTE2920

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 14mOhm @ 54A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 4500 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH70N65X3

IXFH70N65X3

MOSFET 70A 650V X3 TO247

IXYS
351 -

RFQ

IXFH70N65X3

Scheda tecnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 650 V 70A (Tc) 10V 44mOhm @ 35A, 10V 5.2V @ 4mA 66 nC @ 10 V ±20V 4600 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDA2712

FDA2712

MOSFET N-CH 250V 64A TO3PN

Fairchild Semiconductor
2,332 -

RFQ

FDA2712

Scheda tecnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 250 V 64A (Tc) 10V 34mOhm @ 40A, 10V 5V @ 250µA 129 nC @ 10 V ±30V 10175 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF4C120070K4S

UF4C120070K4S

1200V/70MOHM, SIC, FAST CASCODE

UnitedSiC
240 -

RFQ

UF4C120070K4S

Scheda tecnica

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 27.5A (Tc) - 91mOhm @ 20A, 12V 6V @ 10mA 37.8 nC @ 15 V ±20V 1370 pF @ 800 V - 217W (Tc) -55°C ~ 175°C (TJ)
NTE2393

NTE2393

MOSFET N-CHANNEL 500V 10A TO3P

NTE Electronics, Inc
108 -

RFQ

NTE2393

Scheda tecnica

Bag - Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 670mOhm @ 5A, 10V 4V @ 1mA - ±20V - - 125W (Tc) 150°C (TJ) Through Hole
TP65H050G4WS

TP65H050G4WS

650 V 34 A GAN FET

Transphorm
218 -

RFQ

TP65H050G4WS

Scheda tecnica

Tube SuperGaN® Active N-Channel GaNFET (Gallium Nitride) 650 V 34A (Tc) 10V 60mOhm @ 22A, 10V 4.8V @ 700µA 24 nC @ 10 V ±20V 1000 pF @ 400 V - 119W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTH4L060N065SC1

NTH4L060N065SC1

SIC MOS TO247-4L 650V

onsemi
450 -

RFQ

NTH4L060N065SC1

Scheda tecnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 47A (Tc) 15V, 18V 70mOhm @ 20A, 18V 4.3V @ 6.5mA 74 nC @ 18 V +22V, -8V 1473 pF @ 325 V - 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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