Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL640STRRPBF

IRL640STRRPBF

MOSFET N-CH 200V 17A D2PAK

Vishay Siliconix
3,493 -

RFQ

IRL640STRRPBF

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840LCSTRRPBF

IRF840LCSTRRPBF

MOSFET N-CH 500V 8A TO263AB

Vishay Siliconix
3,683 -

RFQ

IRF840LCSTRRPBF

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK12A50W,S5X

TK12A50W,S5X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
3,936 -

RFQ

TK12A50W,S5X

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Ta) 10V 300mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C Through Hole
IPA050N10NM5SXKSA1

IPA050N10NM5SXKSA1

MOSFET N-CH 100V 66A TO220

Infineon Technologies
2,632 -

RFQ

IPA050N10NM5SXKSA1

Scheda tecnica

Tube OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 100 V 66A (Tc) 6V, 10V 5mOhm @ 33A, 10V 3.8V @ 84µA 68 nC @ 10 V ±20V 4700 pF @ 50 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTY64N055T-TRL

IXTY64N055T-TRL

MOSFET N-CH 55V 64A TO252

IXYS
3,350 -

RFQ

Tape & Reel (TR) Trench Active N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 13mOhm @ 32A, 10V 4V @ 25µA 37 nC @ 10 V ±20V 1420 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS5C430NT3G

NTMFS5C430NT3G

MOSFET N-CH 40V 35A/185A 5DFN

onsemi
2,854 -

RFQ

NTMFS5C430NT3G

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 10V 1.7mOhm @ 50A, 10V 3.5V @ 250µA 47 nC @ 10 V ±20V 3300 pF @ 25 V - 3.8W (Ta), 106W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STF150N10F7

STF150N10F7

MOSFET N-CH 100V 65A TO220FP

STMicroelectronics
2,218 -

RFQ

STF150N10F7

Scheda tecnica

Tube DeepGATE™, STripFET™ VII Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 65A (Tc) 10V 4.2mOhm @ 55A, 10V 4.5V @ 250µA 117 nC @ 10 V ±20V 8115 pF @ 50 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHA180N60E-GE3

SIHA180N60E-GE3

MOSFET N-CH 600V 19A TO220

Vishay Siliconix
2,531 -

RFQ

SIHA180N60E-GE3

Scheda tecnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL7537PBF

IRFSL7537PBF

MOSFET N-CH 60V 173A TO262

Infineon Technologies
1,000 -

RFQ

IRFSL7537PBF

Scheda tecnica

Bulk,Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 173A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHB18N60E-GE3

SIHB18N60E-GE3

MOSFET N-CH 600V 18A TO263

Vishay Siliconix
2,000 -

RFQ

SIHB18N60E-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 202mOhm @ 9A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUA180N08S5N026AUMA1

IAUA180N08S5N026AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies
2,407 -

RFQ

IAUA180N08S5N026AUMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tj) 6V, 10V 2.6mOhm @ 90A, 10V 3.8V @ 100µA 87 nC @ 10 V ±20V 5980 pF @ 40 V - 179W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS5C410NLAFT3G

NVMFS5C410NLAFT3G

MOSFET N-CH 40V 50A/330A 5DFN

onsemi
2,036 -

RFQ

NVMFS5C410NLAFT3G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta), 330A (Tc) 4.5V, 10V 0.82mOhm @ 50A, 10V 2V @ 250µA 143 nC @ 10 V ±20V 8862 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2903ZPBF

IRF2903ZPBF

MOSFET N-CH 30V 75A TO220AB

Infineon Technologies
2,958 -

RFQ

IRF2903ZPBF

Scheda tecnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL40B209

IRL40B209

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies
2,683 -

RFQ

IRL40B209

Scheda tecnica

Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.25mOhm @ 100A, 10V 2.4V @ 250µA 270 nC @ 4.5 V ±20V 15140 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80N06S208ATMA2

IPB80N06S208ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies
2,542 -

RFQ

IPB80N06S208ATMA2

Scheda tecnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 7.7mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 2860 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHP17N60D-E3

SIHP17N60D-E3

MOSFET N-CH 600V 17A TO220AB

Vishay Siliconix
2,662 -

RFQ

SIHP17N60D-E3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 1780 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP17N60D-GE3

SIHP17N60D-GE3

MOSFET N-CH 600V 17A TO220AB

Vishay Siliconix
3,681 -

RFQ

SIHP17N60D-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 1780 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD70N6F3

STD70N6F3

MOSFET N-CH 60V 70A DPAK

STMicroelectronics
2,421 -

RFQ

STD70N6F3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ III Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 10.5mOhm @ 35A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 2200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK7A65D(STA4,Q,M)

TK7A65D(STA4,Q,M)

MOSFET N-CH 650V 7A TO220SIS

Toshiba Semiconductor and Storage
3,060 -

RFQ

TK7A65D(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Ta) 10V 980mOhm @ 3.5A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
STW8NK80Z

STW8NK80Z

MOSFET N-CH 800V 6.2A TO247-3

STMicroelectronics
2,039 -

RFQ

STW8NK80Z

Scheda tecnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 800 V 6.2A (Tc) 10V 1.5Ohm @ 3.1A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 1320 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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