Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RK7002BT116

RK7002BT116

MOSFET N-CH 60V 250MA SST3

Rohm Semiconductor
2,605 -

RFQ

RK7002BT116

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 250mA (Ta) 2.5V, 10V 2.4Ohm @ 250mA, 10V 2.3V @ 1mA - ±20V 15 pF @ 25 V - 200mW (Ta) 150°C (TJ) Surface Mount
STQ1HN60K3-AP

STQ1HN60K3-AP

MOSFET N-CH 600V 400MA TO92-3

STMicroelectronics
3,501 -

RFQ

STQ1HN60K3-AP

Scheda tecnica

Cut Tape (CT),Tape & Box (TB) SuperMESH3™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 400mA (Tc) 10V 8Ohm @ 600mA, 10V 4.5V @ 50µA 9.5 nC @ 10 V ±30V 140 pF @ 50 V - 3W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSM6K405TU,LF

SSM6K405TU,LF

MOSFET N-CH 20V 2A UF6

Toshiba Semiconductor and Storage
2,758 -

RFQ

SSM6K405TU,LF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4V 126mOhm @ 1A, 4V 1V @ 1mA 3.4 nC @ 4 V ±10V 195 pF @ 10 V - 500mW (Ta) 150°C Surface Mount
2N7002W-G

2N7002W-G

MOSFET N-CH 60V 0.25A SOT323

Comchip Technology
1,980 -

RFQ

2N7002W-G

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2102A-TP

SI2102A-TP

N-CHANNEL MOSFET

Micro Commercial Co
1,318 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 3A 2.5V, 4.5V 70mOhm @ 2.5A, 4.5V 1.1V @ 250µA 3.6 nC @ 4.5 V ±10V 220 pF @ 10 V - 200mW -55°C ~ 150°C (TJ) Surface Mount
SI4776DY-T1-GE3

SI4776DY-T1-GE3

MOSFET N-CHANNEL 30V 11.9A 8SO

Vishay Siliconix
1,146 -

RFQ

SI4776DY-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) SkyFET®, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.9A (Tc) 4.5V, 10V 16mOhm @ 10A, 10V 2.3V @ 1mA 17.5 nC @ 10 V ±20V 521 pF @ 15 V - 4.1W (Tc) -55°C ~ 150°C (TA) Surface Mount
FDMC8588

FDMC8588

MOSFET N-CH 25V 16.5A/40A PWR33

onsemi
6,200 -

RFQ

FDMC8588

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 16.5A (Ta), 40A (Tc) 4.5V, 10V 5mOhm @ 17A, 10V 1.8V @ 250µA 12 nC @ 4.5 V ±12V 1228 pF @ 13 V - 2.4W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SSM3J35CT,L3F

SSM3J35CT,L3F

MOSFET P-CHANNEL 20V 100MA CST3

Toshiba Semiconductor and Storage
7,163 -

RFQ

SSM3J35CT,L3F

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.2V, 4V 8Ohm @ 50mA, 4V 1V @ 1mA - ±10V 12.2 pF @ 3 V - 100mW (Ta) 150°C Surface Mount
NX5008NBKHH

NX5008NBKHH

MOSFET N-CH 50V 350MA DFN0606-3

Nexperia USA Inc.
7,034 -

RFQ

NX5008NBKHH

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 50 V 350mA (Ta) - 2.8Ohm @ 200mA, 4.5V 900mV @ 250µA 0.7 nC @ 4.5 V ±8V 30 pF @ 25 V - 380mW (Ta), 2.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD70R950CEAUMA1

IPD70R950CEAUMA1

MOSFET N-CH 700V 7.4A TO252-3

Infineon Technologies
1,500 -

RFQ

IPD70R950CEAUMA1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 700 V 7.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 150µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V Super Junction 68W (Tc) -40°C ~ 150°C (TJ) Surface Mount
PMH850UPEH

PMH850UPEH

MOSFET P-CH 30V 600MA DFN0606-3

Nexperia USA Inc.
9,289 -

RFQ

PMH850UPEH

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 600mA (Ta) 1.5V, 4.5V 1Ohm @ 500mA, 4.5V 950mV @ 250µA 0.9 nC @ 4.5 V ±8V 62.2 pF @ 15 V - 660mW (Ta), 2.23W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMV450ENEAR

PMV450ENEAR

MOSFET N-CH 60V 800MA TO236AB

Nexperia USA Inc.
7,935 -

RFQ

PMV450ENEAR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 800mA (Ta) 4.5V, 10V 380mOhm @ 900mA, 10V 2.7V @ 250µA 3.6 nC @ 10 V ±20V 101 pF @ 30 V - 323mW (Ta), 554mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZ600UNEYL

PMZ600UNEYL

MOSFET N-CH 20V 600MA DFN1006-3

Nexperia USA Inc.
5,253 -

RFQ

PMZ600UNEYL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 600mA (Ta) 1.2V, 4.5V 620mOhm @ 600mA, 4.5V 950mV @ 250µA 0.7 nC @ 4.5 V ±8V 21.3 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZ600UNELYL

PMZ600UNELYL

MOSFET N-CH 20V 600MA DFN1006-3

Nexperia USA Inc.
3,270 -

RFQ

PMZ600UNELYL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - 20 V 600mA (Tc) - 620mOhm @ 600mA, 4.5V 950mV @ 250µA 0.7 nC @ 4.5 V - 21.3 pF @ 10 V Standard 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4862DY-T1-E3

SI4862DY-T1-E3

MOSFET N-CH 16V 17A 8SO

Vishay Siliconix
3,778 -

RFQ

SI4862DY-T1-E3

Scheda tecnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 16 V 17A (Ta) 2.5V, 4.5V 3.3mOhm @ 25A, 4.5V 600mV @ 250µA (Min) 70 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC016N06NSSCATMA1

BSC016N06NSSCATMA1

TRENCH 40<-<100V PG-WSON-8

Infineon Technologies
2,626 -

RFQ

BSC016N06NSSCATMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 234A (Tc) 6V, 10V 1.6mOhm @ 50A, 10V 3.3V @ 95µA 95 nC @ 10 V ±20V 6500 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA600N25NM3SXKSA1

IPA600N25NM3SXKSA1

MOSFET N-CH 250V 15A TO220

Infineon Technologies
3,796 -

RFQ

IPA600N25NM3SXKSA1

Scheda tecnica

Bulk,Tube OptiMOS™3 Active N-Channel MOSFET (Metal Oxide) 250 V 15A (Tc) 10V 60mOhm @ 15A, 10V 4V @ 89µA 29 nC @ 10 V ±20V 2300 pF @ 100 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA1R6N100D2-TRL

IXTA1R6N100D2-TRL

MOSFET N-CH 1000V 1.6A TO263

IXYS
3,102 -

RFQ

Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tj) 0V 10Ohm @ 800mA, 0V 4.5V @ 100µA 27 nC @ 5 V ±20V 645 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK12A45D(STA4,Q,M)

TK12A45D(STA4,Q,M)

MOSFET N-CH 450V 12A TO220SIS

Toshiba Semiconductor and Storage
2,124 -

RFQ

TK12A45D(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 12A (Ta) 10V 520mOhm @ 6A, 10V 4V @ 1mA 24 nC @ 10 V ±30V 1200 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
IRF5210STRRPBF

IRF5210STRRPBF

MOSFET P-CH 100V 38A D2PAK

Infineon Technologies
3,312 -

RFQ

IRF5210STRRPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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