Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTMFS4C020NT3G

NTMFS4C020NT3G

MOSFET N-CH 30V 47A/303A 5DFN

onsemi
2,187 -

RFQ

NTMFS4C020NT3G

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Ta), 303A (Tc) 4.5V, 10V 0.7mOhm @ 30A, 10V 2.2V @ 250µA 139 nC @ 10 V ±20V 10144 pF @ 15 V - 3.2W (Ta), 134W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM200N04-1M8_GE3

SQM200N04-1M8_GE3

MOSFET N-CH 40V 200A TO263-7

Vishay Siliconix
2,999 -

RFQ

SQM200N04-1M8_GE3

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 10V 1.8mOhm @ 30A, 10V 3.5V @ 250µA 310 nC @ 10 V ±20V 17350 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STF11N65M2

STF11N65M2

MOSFET N-CH 650V 7A TO220FP

STMicroelectronics
2,675 -

RFQ

STF11N65M2

Scheda tecnica

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 670mOhm @ 3.5A, 10V 4V @ 250µA 12.5 nC @ 10 V ±25V 410 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STL22N60M6

STL22N60M6

MOSFET N-CH 600V 10A PWRFLAT HV

STMicroelectronics
2,434 -

RFQ

STL22N60M6

Scheda tecnica

Tape & Reel (TR) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 250mOhm @ 5A, 10V 4.75V @ 250µA 20 nC @ 10 V ±25V 800 pF @ 100 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS4C302NT3G

NTMFS4C302NT3G

NFET SO8FL 30V 1.15MO

onsemi
3,175 -

RFQ

NTMFS4C302NT3G

Scheda tecnica

Tray - Active N-Channel MOSFET (Metal Oxide) 30 V 41A (Ta), 230A (Tc) 4.5V, 10V 1.15mOhm @ 30A, 10V 2.2V @ 250µA 82 nC @ 10 V ±20V 5780 pF @ 15 V - 3.13W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA65R310CFDXKSA2

IPA65R310CFDXKSA2

MOSFET N-CH 650V 11.4A TO220

Infineon Technologies
2,570 -

RFQ

IPA65R310CFDXKSA2

Scheda tecnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R310CFDXKSA2

IPP65R310CFDXKSA2

MOSFET N-CH 650V 11.4A TO220-3

Infineon Technologies
3,327 -

RFQ

IPP65R310CFDXKSA2

Scheda tecnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS5A140PLZWFT1G

NVMFS5A140PLZWFT1G

MOSFET P-CH 40V 20A/140A 5DFN

onsemi
2,926 -

RFQ

NVMFS5A140PLZWFT1G

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Obsolete P-Channel MOSFET (Metal Oxide) 40 V 20A (Ta), 140A (Tc) 4.5V, 10V 4.2mOhm @ 50A, 10V 2.6V @ 1mA 136 nC @ 10 V ±20V 7400 pF @ 20 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI90N06S4L04AKSA2

IPI90N06S4L04AKSA2

MOSFET N-CH 60V 90A TO262-3

Infineon Technologies
9,000 -

RFQ

IPI90N06S4L04AKSA2

Scheda tecnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 3.7mOhm @ 90A, 10V 2.2V @ 90µA 170 nC @ 10 V ±16V 13000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK6A60W,S4VX

TK6A60W,S4VX

MOSFET N-CH 600V 6.2A TO220SIS

Toshiba Semiconductor and Storage
2,646 -

RFQ

TK6A60W,S4VX

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 750mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
TK8Q60W,S1VQ

TK8Q60W,S1VQ

MOSFET N-CH 600V 8A IPAK

Toshiba Semiconductor and Storage
2,455 -

RFQ

TK8Q60W,S1VQ

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 500mOhm @ 4A, 10V 3.7V @ 400µA 18.5 nC @ 10 V ±30V 570 pF @ 300 V Super Junction 80W (Tc) 150°C (TJ) Through Hole
SIHB180N60E-GE3

SIHB180N60E-GE3

MOSFET N-CH 600V 19A D2PAK

Vishay Siliconix
2,338 -

RFQ

SIHB180N60E-GE3

Scheda tecnica

Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ44STRRPBF

IRLZ44STRRPBF

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,322 -

RFQ

IRLZ44STRRPBF

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM60030E-GE3

SUM60030E-GE3

MOSFET N-CH 80V 120A TO263

Vishay Siliconix
2,595 -

RFQ

SUM60030E-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 7.5V, 10V 3.2mOhm @ 30A, 10V 4V @ 250µA 141 nC @ 10 V ±20V 7910 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR3110ZTRL

AUIRLR3110ZTRL

MOSFET N-CH 100V 63A DPAK

Infineon Technologies
2,013 -

RFQ

AUIRLR3110ZTRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) - 14mOhm @ 38A, 10V 2.5V @ 100µA 48 nC @ 4.5 V - 3980 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP60R385CPXKSA1

IPP60R385CPXKSA1

MOSFET N-CH 650V 9A TO220-3

Infineon Technologies
2,276 -

RFQ

IPP60R385CPXKSA1

Scheda tecnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6008ANX

R6008ANX

MOSFET N-CH 600V 8A TO-220FM

Rohm Semiconductor
1,234 -

RFQ

R6008ANX

Scheda tecnica

Bulk,Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 800mOhm @ 4A, 10V 4.5V @ 1mA 21 nC @ 10 V ±30V 680 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
BUK762R4-60E,118

BUK762R4-60E,118

MOSFET N-CH 60V 120A D2PAK

Nexperia USA Inc.
3,344 -

RFQ

BUK762R4-60E,118

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 25A, 10V 4V @ 1mA 158 nC @ 10 V ±20V 11180 pF @ 25 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA90R800C3XKSA2

IPA90R800C3XKSA2

MOSFET N-CH 900V 6.9A TO220

Infineon Technologies
3,890 -

RFQ

IPA90R800C3XKSA2

Scheda tecnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP90R800C3XKSA2

IPP90R800C3XKSA2

MOSFET N-CH 900V 6.9A TO220-3

Infineon Technologies
3,419 -

RFQ

IPP90R800C3XKSA2

Scheda tecnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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