Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDBL0120N40

FDBL0120N40

MOSFET N-CH 40V 240A 8HPSOF

onsemi
3,392 -

RFQ

FDBL0120N40

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.2mOhm @ 80A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 7735 pF @ 25 V - 300W (Tj) -55°C ~ 175°C (TJ) Surface Mount
2SK3801

2SK3801

MOSFET N-CH 40V 70A TO3P

Sanken
2,143 -

RFQ

2SK3801

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Ta) 10V 6mOhm @ 35A, 10V 4V @ 1mA - ±20V 5100 pF @ 10 V - 100W (Tc) 150°C (TJ) Through Hole
AOK40N30L

AOK40N30L

MOSFET N-CH 300V 40A TO247

Alpha & Omega Semiconductor Inc.
2,537 -

RFQ

AOK40N30L

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 300 V 40A (Tc) 10V 85mOhm @ 20A, 10V 4.1V @ 250µA 72 nC @ 10 V ±30V 3270 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY1N100P

IXTY1N100P

MOSFET N-CH 1000V 1A TO252

IXYS
2,256 -

RFQ

IXTY1N100P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1A (Tc) 10V 15Ohm @ 500mA, 10V 4.5V @ 50µA 15.5 nC @ 10 V ±20V 331 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK12A53D(STA4,Q,M)

TK12A53D(STA4,Q,M)

MOSFET N-CH 525V 12A TO220SIS

Toshiba Semiconductor and Storage
3,670 -

RFQ

TK12A53D(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 525 V 12A (Ta) 10V 580mOhm @ 6A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
AOB2502L

AOB2502L

MOSFET N-CH 150V 106A TO263

Alpha & Omega Semiconductor Inc.
3,582 -

RFQ

AOB2502L

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 150 V 106A (Tc) 10V 10.7mOhm @ 20A, 10V 5.1V @ 250µA 60 nC @ 10 V ±20V 3010 pF @ 75 V - 277W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STL24N60M6

STL24N60M6

MOSFET N-CH 600V 15A PWRFLAT HV

STMicroelectronics
2,898 -

RFQ

STL24N60M6

Scheda tecnica

Tape & Reel (TR) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 209mOhm @ 8.5A, 10V 4.75V @ 250µA 23 nC @ 10 V ±25V 960 pF @ 100 V - 109W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C410NAFT3G

NVMFS5C410NAFT3G

MOSFET N-CH 40V 46A/300A 5DFN

onsemi
3,747 -

RFQ

NVMFS5C410NAFT3G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 300A (Tc) 10V 0.92mOhm @ 50A, 10V 3.5V @ 250µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 3.9W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK11A55D(STA4,Q,M)

TK11A55D(STA4,Q,M)

MOSFET N-CH 550V 11A TO220SIS

Toshiba Semiconductor and Storage
2,038 -

RFQ

TK11A55D(STA4,Q,M)

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 11A (Ta) 10V 630mOhm @ 5.5A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
R5013ANJTL

R5013ANJTL

MOSFET N-CH 500V 13A LPTS

Rohm Semiconductor
2,950 -

RFQ

R5013ANJTL

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Ta) 10V 380mOhm @ 6.5A, 10V 4.5V @ 1mA 35 nC @ 10 V ±30V 1300 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
NVB125N65S3

NVB125N65S3

SF3 650V EASY 125MOHM D2PAK AUTO

onsemi
2,636 -

RFQ

NVB125N65S3

Scheda tecnica

Tape & Reel (TR) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 590µA 46 nC @ 10 V ±30V 1940 pF @ 400 V - 181W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK16E60W,S1VX

TK16E60W,S1VX

MOSFET N-CH 600V 15.8A TO220

Toshiba Semiconductor and Storage
2,329 -

RFQ

TK16E60W,S1VX

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 130W (Tc) 150°C (TJ) Through Hole
DMTH10H005LCT

DMTH10H005LCT

MOSFET N-CH 100V 140A TO220AB

Diodes Incorporated
3,736 -

RFQ

DMTH10H005LCT

Scheda tecnica

Tube Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 5mOhm @ 13A, 10V 3.5V @ 250µA 114 nC @ 10 V ±20V 3688 pF @ 50 V - 187W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3610STRLPBF

IRF3610STRLPBF

MOSFET N-CH 100V 103A D2PAK

Infineon Technologies
3,694 -

RFQ

IRF3610STRLPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 103A (Tc) - 11.6mOhm @ 62A, 10V 4V @ 250µA 150 nC @ 10 V - 5380 pF @ 25 V - - - Surface Mount
IRF100DM116XTMA1

IRF100DM116XTMA1

TRENCH >=100V DIRECTFET

Infineon Technologies
3,263 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
STW25N60M2-EP

STW25N60M2-EP

MOSFET N-CHANNEL 600V 18A TO247

STMicroelectronics
3,234 -

RFQ

Tube MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 188mOhm @ 9A, 10V 4.75V @ 250µA 29 nC @ 10 V ±25V 1090 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA8N90C-F109

FQA8N90C-F109

MOSFET N-CH 900V 8A TO3PN

onsemi
2,380 -

RFQ

FQA8N90C-F109

Scheda tecnica

Bulk,Tube,Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.9Ohm @ 4A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2080 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS4C01NWFT3G

NVMFS4C01NWFT3G

MOSFET N-CH 30V 49A/319A 5DFN

onsemi
2,198 -

RFQ

NVMFS4C01NWFT3G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 49A (Ta), 319A (Tc) 4.5V, 10V 0.9mOhm @ 30A, 10V 2.2V @ 250µA 139 nC @ 10 V ±20V 10144 pF @ 15 V - 3.84W (Ta), 161W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB200NF03T4

STB200NF03T4

MOSFET N-CH 30V 120A D2PAK

STMicroelectronics
3,849 -

RFQ

STB200NF03T4

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ III Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 3.6mOhm @ 60A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 4950 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDBL9401-F085

FDBL9401-F085

MOSFET N-CH 40V 300A 8HPSOF

onsemi
2,653 -

RFQ

FDBL9401-F085

Scheda tecnica

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 0.65mOhm @ 80A, 10V 4V @ 250µA 296 nC @ 10 V ±20V 15900 pF @ 25 V - 429W (Tj) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente