Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK3800VR

2SK3800VR

MOSFET N-CH 40V 70A TO220S

Sanken
3,790 -

RFQ

2SK3800VR

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Ta) 10V 6mOhm @ 35A, 10V 4V @ 1mA - ±20V 5100 pF @ 10 V - 80W (Tc) 150°C (TJ) Surface Mount
2SK3800

2SK3800

MOSFET N-CH 40V 70A TO220S

Sanken
2,722 -

RFQ

2SK3800

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Ta) 10V 6mOhm @ 35A, 10V 4V @ 1mA - ±20V 5100 pF @ 10 V - 80W (Tc) 150°C (TJ) Surface Mount
NVMYS2D3N06CTWG

NVMYS2D3N06CTWG

T6 60V SL LFPAK4 5X6

onsemi
2,239 -

RFQ

NVMYS2D3N06CTWG

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 28.7A (Ta), 171A (Tc) 10V 2.3mOhm @ 50A, 10V 4V @ 180µA 46 nC @ 10 V ±20V 3584 pF @ 25 V - 3.8W (Ta), 134.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIE818DF-T1-GE3

SIE818DF-T1-GE3

MOSFET N-CH 75V 60A 10POLARPAK

Vishay Siliconix
3,028 -

RFQ

SIE818DF-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 75 V 60A (Tc) 4.5V, 10V 9.5mOhm @ 16A, 10V 3V @ 250µA 95 nC @ 10 V ±20V 3200 pF @ 38 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE808DF-T1-GE3

SIE808DF-T1-GE3

MOSFET N-CH 20V 60A 10POLARPAK

Vishay Siliconix
2,423 -

RFQ

SIE808DF-T1-GE3

Scheda tecnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 1.6mOhm @ 25A, 10V 3V @ 250µA 155 nC @ 10 V ±20V 8800 pF @ 10 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMYS6D2N06CLTWG

NTMYS6D2N06CLTWG

MOSFET N-CH 60V 4LFPAK

onsemi
3,031 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 71A (Tc) - - - - - - - - - Surface Mount
NVMFS5C410NLWFET1G

NVMFS5C410NLWFET1G

T6 40V SO8FL

onsemi
3,885 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta), 330A (Tc) 4.5V, 10V 820µOhm @ 50A, 10V 2V @ 250µA 143 nC @ 10 V ±20V 8862 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMP3026SFDE-7

DMP3026SFDE-7

MOSFET P-CH 30V 10.4A 6UDFN

Diodes Incorporated
3,240 -

RFQ

DMP3026SFDE-7

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 10.4A (Ta) 4V, 10V 19mOhm @ 4.5A, 10V 3V @ 250µA 19.6 nC @ 10 V ±25V 1204 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C410NWFET1G

NVMFS5C410NWFET1G

T6-40V N 0.92 MOHMS SL

onsemi
2,334 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IXTA80N10T-TRL

IXTA80N10T-TRL

MOSFET N-CH 100V 80A TO263

IXYS
2,016 -

RFQ

Tape & Reel (TR) Trench Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 14mOhm @ 25A, 10V 5V @ 100µA 60 nC @ 10 V ±20V 3040 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMP2070UQ-7

DMP2070UQ-7

MOSFET BVDSS: 8V~24V SOT23 T&R 3

Diodes Incorporated
2,868 -

RFQ

DMP2070UQ-7

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 20 V 4.6A (Tc) 1.8V, 4.5V 44mOhm @ 2A, 4.5V 950mV @ 250µA 8.2 nC @ 8 V ±8V 118 pF @ 10 V - 830mW -55°C ~ 150°C (TJ) Surface Mount
TK8A60W,S4VX

TK8A60W,S4VX

MOSFET N-CH 600V 8A TO220SIS

Toshiba Semiconductor and Storage
3,075 -

RFQ

TK8A60W,S4VX

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 500mOhm @ 4A, 10V 3.7V @ 400µA 18.5 nC @ 10 V ±30V 570 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
SI1070X-T1-GE3

SI1070X-T1-GE3

MOSFET N-CH 30V 1.2A SC89-6

Vishay Siliconix
2,999 -

RFQ

SI1070X-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 1.2A (Ta) 2.5V, 4.5V 99mOhm @ 1.2A, 4.5V 1.55V @ 250µA 8.3 nC @ 5 V ±12V 385 pF @ 15 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP21D0UFD-7

DMP21D0UFD-7

MOSFET P-CH 20V 820MA 3DFN

Diodes Incorporated
5,920 -

RFQ

DMP21D0UFD-7

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 820mA (Ta) 1.5V, 4.5V 495mOhm @ 800mA, 4.5V 1.2V @ 250µA 3 nC @ 4.5 V ±8V 80 pF @ 10 V - 490mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSM6K341NU,LF

SSM6K341NU,LF

MOSFET N-CH 60V 6A 6UDFNB

Toshiba Semiconductor and Storage
2,285 -

RFQ

SSM6K341NU,LF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4V, 10V 36mOhm @ 4A, 10V 2.5V @ 100µA 9.3 nC @ 10 V ±20V 550 pF @ 10 V - 2.5W (Ta) 150°C Surface Mount
SQ1464EEH-T1_GE3

SQ1464EEH-T1_GE3

MOSFET N-CH 60V 440MA SC70-6

Vishay Siliconix
17,336 -

RFQ

SQ1464EEH-T1_GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 440mA (Tc) 1.5V 1.41Ohm @ 2A, 1.5V 1V @ 250µA 4.1 nC @ 4.5 V ±8V 140 pF @ 25 V - 430mW (Tc) -55°C ~ 175°C (TJ) Surface Mount
SSM3K361R,LF

SSM3K361R,LF

MOSFET N-CH 100V 3.5A SOT-23F

Toshiba Semiconductor and Storage
6,600 -

RFQ

SSM3K361R,LF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 3.5A (Ta) 4.5V, 10V 69mOhm @ 2A, 10V 2.5V @ 100µA 3.2 nC @ 4.5 V ±20V 430 pF @ 15 V - 1.2W (Ta) 175°C Surface Mount
FJ4B01110L1

FJ4B01110L1

MOSFET P-CH 12V 1.4A ALGA004

Panasonic Electronic Components
1,845 -

RFQ

FJ4B01110L1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 1.4A (Ta) 1.5V, 4.5V 153mOhm @ 700mA, 4.5V 1V @ 598µA 3.3 nC @ 4.5 V ±8V 226 pF @ 10 V - 340mW (Ta) -40°C ~ 85°C (TA) Surface Mount
RQ5C035BCTCL

RQ5C035BCTCL

MOSFET P-CHANNEL 20V 3.5A TSMT3

Rohm Semiconductor
1,834 -

RFQ

RQ5C035BCTCL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 4.5V 59mOhm @ 3.5A, 4.5V 1.2V @ 1mA 6.5 nC @ 4.5 V ±8V 460 pF @ 10 V - 1W (Tc) 150°C (TJ) Surface Mount
SI2302CDS-T1-GE3

SI2302CDS-T1-GE3

MOSFET N-CH 20V 2.6A SOT23-3

Vishay Siliconix
301 -

RFQ

SI2302CDS-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 2.5V, 4.5V 57mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5 nC @ 4.5 V ±8V - - 710mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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