Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IAUA250N08S5N018AUMA1

IAUA250N08S5N018AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies
3,464 -

RFQ

IAUA250N08S5N018AUMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 250A (Tj) 6V, 10V 1.8mOhm @ 100A, 10V 3.8V @ 150µA 125 nC @ 10 V ±20V 8715 pF @ 40 V - 238W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PXN7R7-25QLJ

PXN7R7-25QLJ

PXN7R7-25QL/SOT8002/MLPAK33

Nexperia USA Inc.
2,259 -

RFQ

PXN7R7-25QLJ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 11.8A (Ta), 32A (Tc) 4.5V, 10V 7.7mOhm @ 11.8A, 10V 2.2V @ 250µA 16.6 nC @ 10 V ±20V 770 pF @ 12.5 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP22N60E-E3

SIHP22N60E-E3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix
3,967 -

RFQ

SIHP22N60E-E3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
PXN8R3-30QLJ

PXN8R3-30QLJ

PXN8R3-30QL/SOT8002/MLPAK33

Nexperia USA Inc.
1,807 -

RFQ

PXN8R3-30QLJ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 11.4A (Ta), 31A (Tc) 4.5V, 10V 8.3mOhm @ 11.4A, 10V 2.2V @ 250µA 15.9 nC @ 10 V ±20V 760 pF @ 15 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS5C426NT3G

NTMFS5C426NT3G

MOSFET N-CH 40V 41A/235A 5DFN

onsemi
3,440 -

RFQ

NTMFS5C426NT3G

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 235A (Tc) 10V 1.3mOhm @ 50A, 10V 3.5V @ 250µA 65 nC @ 10 V ±20V 4300 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R8010ANX

R8010ANX

MOSFET N-CH 800V 10A TO220FM

Rohm Semiconductor
3,302 -

RFQ

R8010ANX

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 560mOhm @ 5A, 10V 5V @ 1mA 62 nC @ 10 V ±30V 1750 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
NTLUS3A90PZTAG

NTLUS3A90PZTAG

MOSFET P-CH 20V 2.6A 6UDFN

onsemi
1,290 -

RFQ

NTLUS3A90PZTAG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) µCool™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.5V, 4.5V 62mOhm @ 4A, 4.5V 1V @ 250µA 12.3 nC @ 4.5 V ±8V 950 pF @ 10 V - 600mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPB019N08NF2SATMA1

IPB019N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-3

Infineon Technologies
2,190 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
RRQ030P03TR

RRQ030P03TR

MOSFET P-CH 30V 3A TSMT6

Rohm Semiconductor
1,138 -

RFQ

RRQ030P03TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) 4V, 10V 75mOhm @ 3A, 10V 2.5V @ 1mA 12 nC @ 10 V ±20V 480 pF @ 10 V - 600mW (Ta) 150°C (TJ) Surface Mount
IRFSL7430PBF

IRFSL7430PBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
3,045 -

RFQ

IRFSL7430PBF

Scheda tecnica

Tube HEXFET®, StrongIRFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STFU14N80K5

STFU14N80K5

MOSFET N-CH 800V 12A TO220FP

STMicroelectronics
2,654 -

RFQ

STFU14N80K5

Scheda tecnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 445mOhm @ 6A, 10V 5V @ 100µA 22 nC @ 10 V ±30V 620 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIA427DJ-T1-GE3

SIA427DJ-T1-GE3

MOSFET P-CH 8V 12A PPAK SC70-6

Vishay Siliconix
1,007 -

RFQ

SIA427DJ-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 8 V 12A (Tc) 1.2V, 4.5V 16mOhm @ 8.2A, 4.5V 800mV @ 250µA 50 nC @ 5 V ±5V 2300 pF @ 4 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMT185N60S5H

NTMT185N60S5H

SUPERFET5 FAST 185MOHM PQFN88

onsemi
2,135 -

RFQ

NTMT185N60S5H

Scheda tecnica

Tape & Reel (TR) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 185mOhm @ 7.5A, 10V 4.3V @ 1.4mA 25 nC @ 10 V ±30V 1350 pF @ 400 V - 116W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RV8L002SNHZGG2CR

RV8L002SNHZGG2CR

MOSFET N-CH 60V 250MA DFN1010-3W

Rohm Semiconductor
7,650 -

RFQ

RV8L002SNHZGG2CR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 250mA (Ta) - 2.4Ohm @ 250mA, 10V 2.3V @ 1mA - ±20V 15 pF @ 25 V - 1W (Ta) 150°C (TJ) Surface Mount
TK13A50DA(STA4,Q,M

TK13A50DA(STA4,Q,M

MOSFET N-CH 500V 12.5A TO220SIS

Toshiba Semiconductor and Storage
2,711 -

RFQ

TK13A50DA(STA4,Q,M

Scheda tecnica

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 12.5A (Ta) 10V 470mOhm @ 6.3A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK14A45DA(STA4,QM)

TK14A45DA(STA4,QM)

MOSFET N-CH 450V 13.5A TO220SIS

Toshiba Semiconductor and Storage
3,152 -

RFQ

TK14A45DA(STA4,QM)

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 450 V 13.5A - 410mOhm @ 6.8A, 10V - - - - - - - Through Hole
IXTY1N120PTRL

IXTY1N120PTRL

MOSFET N-CH 1200V 1A TO252

IXYS
3,625 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1A (Tc) 10V 20Ohm @ 500mA, 10V 4.5V @ 50µA 17.6 nC @ 10 V ±30V 445 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSS84XHZGG2CR

BSS84XHZGG2CR

MOSFET P-CH 60V 230MA DFN1010-3W

Rohm Semiconductor
5,002 -

RFQ

BSS84XHZGG2CR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) - 5.3Ohm @ 230mA, 10V 2.5V @ 100µA - ±20V 34 pF @ 30 V - 1W (Ta) 150°C (TJ) Surface Mount
IPB039N10N3GE8187ATMA1

IPB039N10N3GE8187ATMA1

MOSFET N-CH 100V 160A TO263-7

Infineon Technologies
2,670 -

RFQ

IPB039N10N3GE8187ATMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 6V, 10V 3.9mOhm @ 100A, 10V 3.5V @ 160µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDU6N25

FDU6N25

MOSFET N-CH 250V 4.4A IPAK

onsemi
3,997 -

RFQ

FDU6N25

Scheda tecnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) 10V 1.1Ohm @ 2.2A, 10V 5V @ 250µA 6 nC @ 10 V ±30V 250 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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