Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PMPB12R5EPX

PMPB12R5EPX

PMPB12R5EP - 30 V, P-CHANNEL TRE

Nexperia USA Inc.
1,904 -

RFQ

PMPB12R5EPX

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta) 4.5V, 10V 15mOhm @ 8.8A, 10V 2V @ 250µA 44 nC @ 10 V ±20V 1392 pF @ 15 V - 1.9W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMP3056LSS-13

DMP3056LSS-13

MOSFET P-CH 30V 7.1A 8SOP

Diodes Incorporated
4,185 -

RFQ

DMP3056LSS-13

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 7.1A (Ta) 4.5V, 10V 45mOhm @ 6A, 10V 2.1V @ 250µA 6.8 nC @ 4.5 V ±20V 722 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PSMN017-30BL,118

PSMN017-30BL,118

MOSFET N-CH 30V 32A D2PAK

Nexperia USA Inc.
4,171 -

RFQ

PSMN017-30BL,118

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 32A (Tc) 4.5V, 10V 17mOhm @ 10A, 10V 2.15V @ 1mA 10.7 nC @ 10 V ±20V 552 pF @ 15 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FK3P02110L

FK3P02110L

MOSFET N CH 24V 3A PMCP

Panasonic Electronic Components
5,508 -

RFQ

FK3P02110L

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 24 V 3A (Ta) 2.5V 20mOhm @ 3A, 2.5V 1.4V @ 1mA - ±12V 1500 pF @ 10 V - - 150°C (TJ) Surface Mount
STH150N10F7-2

STH150N10F7-2

MOSFET N-CH 100V 110A H2PAK-2

STMicroelectronics
2,474 -

RFQ

STH150N10F7-2

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 3.9mOhm @ 55A, 10V 4.5V @ 250µA 117 nC @ 10 V ±20V 8115 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPC218N04N3X7SA1

IPC218N04N3X7SA1

MV POWER MOS

Infineon Technologies
2,361 -

RFQ

IPC218N04N3X7SA1

Scheda tecnica

Bulk * Not For New Designs - - - - - - - - - - - - - -
DMTH10H005SCT

DMTH10H005SCT

MOSFET N-CH 100V 140A TO220AB

Diodes Incorporated
2,382 -

RFQ

DMTH10H005SCT

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 5mOhm @ 13A, 10V 4V @ 250µA 111.7 nC @ 10 V ±20V 8474 pF @ 50 V - 187W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTY1N80P

IXTY1N80P

MOSFET N-CH 800V 1A TO252

IXYS
2,826 -

RFQ

IXTY1N80P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 800 V 1A (Tc) 10V 14Ohm @ 500mA, 10V 4V @ 50µA 9 nC @ 10 V ±20V 250 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF150DM115XTMA1

IRF150DM115XTMA1

TRENCH >=100V DIRECTFET

Infineon Technologies
2,983 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 150 V - - - - - - - - - - -
FKP202

FKP202

MOSFET N-CH 200V 45A TO220

Sanken
2,438 -

RFQ

FKP202

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 45A (Ta) 10V 53mOhm @ 22A, 10V 4.5V @ 1mA - ±30V 2000 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
IPB65R190CFDATMA2

IPB65R190CFDATMA2

MOSFET N-CH 650V 17.5A TO263-3

Infineon Technologies
3,242 -

RFQ

IPB65R190CFDATMA2

Scheda tecnica

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH10H2M5STLW-13

DMTH10H2M5STLW-13

MOSFET BVDSS: 61V~100V POWERDI10

Diodes Incorporated
2,897 -

RFQ

DMTH10H2M5STLW-13

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 215A (Tc) 10V 2.5mOhm @ 30A, 10V 4V @ 250µA 124.4 nC @ 10 V ±20V 8450 pF @ 50 V - 5.8W (Ta), 230.8W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMJ65H430SCTI

DMJ65H430SCTI

MOSFET BVDSS: 501V~650V ITO-220A

Diodes Incorporated
2,759 -

RFQ

DMJ65H430SCTI

Scheda tecnica

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 430mOhm @ 5A, 10V 5V @ 250µA 24.5 nC @ 10 V ±30V 775 pF @ 100 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6012ANJTL

R6012ANJTL

MOSFET N-CH 600V 12A LPTS

Rohm Semiconductor
3,104 -

RFQ

R6012ANJTL

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 420mOhm @ 6A, 10V 4.5V @ 1mA 35 nC @ 10 V ±30V 1300 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
TSM70N750CH C5G

TSM70N750CH C5G

MOSFET N-CHANNEL 700V 6A TO251

Taiwan Semiconductor Corporation
3,243 -

RFQ

TSM70N750CH C5G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 750mOhm @ 1.8A, 10V 4V @ 250µA 10.7 nC @ 10 V ±30V 555 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL2910STRRPBF

IRL2910STRRPBF

MOSFET N-CH 100V 55A D2PAK

Infineon Technologies
2,902 -

RFQ

IRL2910STRRPBF

Scheda tecnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) - 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V - 3700 pF @ 25 V - - - Surface Mount
NVMFS4C308NWFT1G

NVMFS4C308NWFT1G

TRENCH 30V NCH

onsemi
2,783 -

RFQ

NVMFS4C308NWFT1G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 17.2A (Ta), 55A (Tc) 4.5V, 10V 4.8mOhm @ 30A, 10V 2.1V @ 250µA 18.2 nC @ 10 V ±20V 1670 pF @ 15 V - 3W (Ta), 30.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
AOTF125A60L

AOTF125A60L

MOSFET N-CH 600V 28A TO220F

Alpha & Omega Semiconductor Inc.
3,207 -

RFQ

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tj) 10V 125mOhm @ 14A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 2993 pF @ 100 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT125A60L

AOT125A60L

MOSFET N-CH 600V 28A TO220

Alpha & Omega Semiconductor Inc.
3,685 -

RFQ

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 125mOhm @ 14A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 2993 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOWF125A60

AOWF125A60

MOSFET N-CH 600V 28A TO262F

Alpha & Omega Semiconductor Inc.
2,804 -

RFQ

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tj) 10V 125mOhm @ 14A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 2993 pF @ 100 V - 32.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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