Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQP90P06-07L_GE3

SQP90P06-07L_GE3

MOSFET P-CH 60V 120A TO220AB

Vishay Siliconix
3,376 -

RFQ

SQP90P06-07L_GE3

Scheda tecnica

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 6.7mOhm @ 30A, 10V 2.5V @ 250µA 270 nC @ 10 V ±20V 14280 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
RQ6E030ATTCR

RQ6E030ATTCR

MOSFET P-CH 30V 3A TSMT6

Rohm Semiconductor
1,559 -

RFQ

RQ6E030ATTCR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) - 91mOhm @ 3A, 10V 2.5V @ 1mA 5.4 nC @ 10 V - 240 pF @ 15 V - - - Surface Mount
SSM3K116TU,LF

SSM3K116TU,LF

MOSFET N-CH 30V 2.2A UFM

Toshiba Semiconductor and Storage
1,411 -

RFQ

SSM3K116TU,LF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIII Active N-Channel MOSFET (Metal Oxide) 30 V 2.2A (Ta) 2.5V, 4.5V 100mOhm @ 500mA, 4.5V 1.1V @ 100µA - ±12V 245 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3457CDV-T1-GE3

SI3457CDV-T1-GE3

MOSFET P-CH 30V 5.1A 6TSOP

Vishay Siliconix
1,322 -

RFQ

SI3457CDV-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 5.1A (Tc) 4.5V, 10V 74mOhm @ 4.1A, 10V 3V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 15 V - 2W (Ta), 3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3424CDV-T1-BE3

SI3424CDV-T1-BE3

N-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix
1,161 -

RFQ

SI3424CDV-T1-BE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta), 8A (Tc) 4.5V, 10V 26mOhm @ 7.2A, 10V 2.5V @ 250µA 12.5 nC @ 10 V ±20V 405 pF @ 15 V - 2W (Ta), 3.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ2303ES-T1_BE3

SQ2303ES-T1_BE3

MOSFET P-CH 30V 2.5A SOT23-3

Vishay Siliconix
361 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 2.5A (Tc) 4.5V, 10V 170mOhm @ 1.7A, 10V 2.5V @ 250µA 6.8 nC @ 10 V ±20V 210 pF @ 25 V - 1.9W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMN2100UDM-7

DMN2100UDM-7

MOSFET N-CH 20V 3.3A SOT-26

Diodes Incorporated
1,900 -

RFQ

DMN2100UDM-7

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 3.3A (Ta) 1.5V, 4.5V 55mOhm @ 6A, 4.5V 1V @ 250µA - ±8V 555 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AO4468

AO4468

MOSFET N-CH 30V 10.5A 8SOIC

Alpha & Omega Semiconductor Inc.
1,540 -

RFQ

AO4468

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 10.5A (Ta) 4.5V, 10V 14mOhm @ 11.6A, 10V 3V @ 250µA 24 nC @ 10 V ±20V 1200 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2306BDS-T1-BE3

SI2306BDS-T1-BE3

N-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix
3,691 -

RFQ

SI2306BDS-T1-BE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 3.16A (Ta) 4.5V, 10V 47mOhm @ 3.5A, 10V 3V @ 250µA 4.5 nC @ 5 V ±20V 305 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMPB07R3ENX

PMPB07R3ENX

PMPB07R3EN/SOT1220-2/DFN2020M-

Nexperia USA Inc.
2,790 -

RFQ

PMPB07R3ENX

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 8.6mOhm @ 12A, 10V 2.2V @ 250µA 19 nC @ 10 V ±20V 914 pF @ 15 V - 1.9W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PXN9R0-30QLJ

PXN9R0-30QLJ

PXN9R0-30QL/SOT8002/MLPAK33

Nexperia USA Inc.
2,059 -

RFQ

PXN9R0-30QLJ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 11.4A (Ta), 41.8A (Tc) 4.5V, 10V 9.1mOhm @ 11.4A, 10V 2.5V @ 250µA 20.7 nC @ 10 V ±20V 865 pF @ 15 V - 1.9W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MCH6321-TL-E

MCH6321-TL-E

MOSFET P-CH 20V 4A 6MCPH

onsemi
1,934 -

RFQ

MCH6321-TL-E

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) - 83mOhm @ 2A, 4.5V - 4.6 nC @ 4.5 V - 375 pF @ 10 V - - - Surface Mount
AON6368

AON6368

MOSFET N-CH 30V 25A/52A 8DFN

Alpha & Omega Semiconductor Inc.
1,485 -

RFQ

AON6368

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta), 52A (Tc) 4.5V, 10V 6.1mOhm @ 20A, 10V 2.2V @ 250µA 13 nC @ 10 V ±20V 820 pF @ 15 V - 6.2W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PXP018-20QXJ

PXP018-20QXJ

PXP018-20QX/SOT8002/MLPAK33

Nexperia USA Inc.
3,332 -

RFQ

PXP018-20QXJ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 8.4A (Ta), 39.7A (Tc) 2.5V, 4.5V 18mOhm @ 8.1A, 4.5V 1.25V @ 250µA 34.8 nC @ 4.5 V ±12V 2.36 pF @ 10 V - 1.8W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PXN6R2-25QLJ

PXN6R2-25QLJ

PXN6R2-25QL/SOT8002/MLPAK33

Nexperia USA Inc.
2,751 -

RFQ

PXN6R2-25QLJ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 13.1A (Ta), 65A (Tc) 4.5V, 10V 6.2mOhm @ 13.1A, 10V 2.2V @ 250µA 25.5 nC @ 10 V ±20V 1200 pF @ 12.5 V - 1.7W (Ta), 40.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMFPB8032XP,115

PMFPB8032XP,115

MOSFET P-CH 20V 2.7A HUSON6

Nexperia USA Inc.
2,680 -

RFQ

PMFPB8032XP,115

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.7A (Ta) 4.5V 102mOhm @ 2.7A, 4.5V 1V @ 250µA 8.6 nC @ 4.5 V ±12V 550 pF @ 10 V Schottky Diode (Isolated) 485mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RZF020P01TL

RZF020P01TL

MOSFET P-CH 12V 2A TUMT3

Rohm Semiconductor
2,428 -

RFQ

RZF020P01TL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 2A (Ta) 1.5V, 4.5V 105mOhm @ 2A, 4.5V 1V @ 1mA 6.5 nC @ 4.5 V ±10V 770 pF @ 6 V - 800mW (Ta) 150°C (TJ) Surface Mount
IXFA7N80P-TRL

IXFA7N80P-TRL

MOSFET N-CH 800V 7A TO263

IXYS
3,118 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 1.44Ohm @ 3.5A, 10V 5V @ 1mA 32 nC @ 10 V ±30V 1800 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2312BDS-T1-BE3

SI2312BDS-T1-BE3

N-CHANNEL 20-V (D-S) MOSFET

Vishay Siliconix
2,280 -

RFQ

SI2312BDS-T1-BE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 3.9A (Ta) 1.8V, 4.5V 31mOhm @ 5A, 4.5V 850mV @ 250µA 12 nC @ 4.5 V ±8V - - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP80N06S207AKSA4

IPP80N06S207AKSA4

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
24,775 -

RFQ

IPP80N06S207AKSA4

Scheda tecnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.6mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 3400 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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