Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA60R299CPXKSA1

IPA60R299CPXKSA1

MOSFET N-CH 600V 11A TO220-FP

Infineon Technologies
2,965 -

RFQ

IPA60R299CPXKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SK830321KL

SK830321KL

MOSFET N-CH 30V 7A/18A 8HSSO

Panasonic Electronic Components
4,981 -

RFQ

SK830321KL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta), 18A (Tc) 4.5V, 10V 24mOhm @ 4.5A, 10V 3V @ 519µA 3.9 nC @ 4.5 V ±20V 658 pF @ 10 V - 2W (Ta), 13W (Tc) 150°C (TJ) Surface Mount
IRF6641TRPBF

IRF6641TRPBF

MOSFET N-CH 200V 4.6A DIRECTFET

Infineon Technologies
4,800 -

RFQ

IRF6641TRPBF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 4.6A (Ta), 26A (Tc) 10V 59.9mOhm @ 5.5A, 10V 4.9V @ 150µA 48 nC @ 10 V ±20V 2290 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
RF6E065BNTCR

RF6E065BNTCR

MOSFET N-CH 30V 6.5A TUMT6

Rohm Semiconductor
2,990 -

RFQ

RF6E065BNTCR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 15.3mOhm @ 6.5A, 10V 2.5V @ 1mA 16.3 nC @ 10 V ±20V 680 pF @ 15 V - 910mW (Ta) 150°C (TJ) Surface Mount
SIHB22N60E-E3

SIHB22N60E-E3

MOSFET N-CH 600V 21A D2PAK

Vishay Siliconix
2,415 -

RFQ

SIHB22N60E-E3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R230CFD7AATMA1

IPB65R230CFD7AATMA1

AUTOMOTIVE_COOLMOS PG-TO263-3

Infineon Technologies
3,181 -

RFQ

IPB65R230CFD7AATMA1

Scheda tecnica

Tape & Reel (TR) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 230mOhm @ 5.2A, 10V 4.5V @ 260µA 23 nC @ 10 V ±20V 1044 pF @ 400 V - 63W (Tc) -40°C ~ 150°C (TJ) Surface Mount
TSM60NB380CH C5G

TSM60NB380CH C5G

MOSFET N-CH 600V 9.5A TO251

Taiwan Semiconductor Corporation
2,657 -

RFQ

TSM60NB380CH C5G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.5A (Tc) 10V 380mOhm @ 2.85A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 795 pF @ 100 V - 83W (Tc) -50°C ~ 150°C (TJ) Through Hole
STP26N65DM2

STP26N65DM2

MOSFET N-CH 650V 20A TO220

STMicroelectronics
3,742 -

RFQ

STP26N65DM2

Scheda tecnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 35.5 nC @ 10 V ±25V 1480 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI076N12N3GAKSA1

IPI076N12N3GAKSA1

MOSFET N-CH 120V 100A TO262-3

Infineon Technologies
2,738 -

RFQ

IPI076N12N3GAKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 100A (Tc) 10V 7.6mOhm @ 100A, 10V 4V @ 130µA 101 nC @ 10 V ±20V 6640 pF @ 60 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK2420

2SK2420

MOSFET N-CH 60V 30A TO220F

Sanken
2,465 -

RFQ

2SK2420

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Ta) 10V 28mOhm @ 15A, 10V 4V @ 250µA - ±20V 2200 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
SKP202VR

SKP202VR

MOSFET N-CH 200V 45A TO263-3

Sanken
2,111 -

RFQ

SKP202VR

Scheda tecnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 45A (Ta) 10V 53mOhm @ 20A, 10V 4.5V @ 1mA - ±30V 2000 pF @ 25 V - 95W (Tc) 150°C (TJ) Surface Mount
TK10Q60W,S1VQ

TK10Q60W,S1VQ

MOSFET N-CH 600V 9.7A IPAK

Toshiba Semiconductor and Storage
3,159 -

RFQ

TK10Q60W,S1VQ

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 430mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 80W (Tc) 150°C (TJ) Through Hole
SI7880ADP-T1-GE3

SI7880ADP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix
3,461 -

RFQ

SI7880ADP-T1-GE3

Scheda tecnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 3V @ 250µA 125 nC @ 10 V ±20V 5600 pF @ 15 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP22N60EL-GE3

SIHP22N60EL-GE3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix
3,828 -

RFQ

SIHP22N60EL-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 197mOhm @ 11A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 1690 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK25V60X,LQ

TK25V60X,LQ

MOSFET N-CH 600V 25A 4DFN

Toshiba Semiconductor and Storage
2,757 -

RFQ

TK25V60X,LQ

Scheda tecnica

Tape & Reel (TR) DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 135mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C Surface Mount
NVMFS5C410NWFAFT3G

NVMFS5C410NWFAFT3G

MOSFET N-CH 40V 46A/300A 5DFN

onsemi
2,300 -

RFQ

NVMFS5C410NWFAFT3G

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 300A (Tc) 10V 0.92mOhm @ 50A, 10V 3.5V @ 250µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 3.9W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6020FNJTL

R6020FNJTL

MOSFET N-CH 600V 20A LPT

Rohm Semiconductor
960 -

RFQ

R6020FNJTL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) * Not For New Designs - - - - - - - - - - - - - -
SI3442BDV-T1-BE3

SI3442BDV-T1-BE3

N-CHANNEL 2.5-V (G-S) MOSFET

Vishay Siliconix
2,790 -

RFQ

SI3442BDV-T1-BE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 57mOhm @ 4A, 4.5V 1.8V @ 250µA 5 nC @ 4.5 V ±12V 295 pF @ 10 V - 860mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
US5U3TR

US5U3TR

MOSFET N-CH 30V 1.5A TUMT5

Rohm Semiconductor
2,739 -

RFQ

US5U3TR

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 2.5V, 4.5V 240mOhm @ 1.5A, 4.5V 1.5V @ 1mA 2.2 nC @ 4.5 V 12V 80 pF @ 10 V Schottky Diode (Isolated) 1W (Ta) 150°C (TJ) Surface Mount
PMCM6501VPEZ

PMCM6501VPEZ

MOSFET P-CH 12V 6.2A 6WLCSP

Nexperia USA Inc.
1,206 -

RFQ

PMCM6501VPEZ

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 6.2A (Ta) 1.8V, 4.5V 25mOhm @ 3A, 4.5V 900mV @ 250µA 29.4 nC @ 4.5 V ±8V 1400 pF @ 6 V - 556mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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