Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA60R099C7XKSA1

IPA60R099C7XKSA1

MOSFET N-CH 600V 12A TO220-FP

Infineon Technologies
3,178 -

RFQ

IPA60R099C7XKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 99mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG33N65E-GE3

SIHG33N65E-GE3

MOSFET N-CH 650V 32.4A TO247AC

Vishay Siliconix
3,137 -

RFQ

SIHG33N65E-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 32.4A (Tc) 10V 105mOhm @ 16.5A, 10V 4V @ 250µA 173 nC @ 10 V ±30V 4040 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP24N60X

IXFP24N60X

MOSFET N-CH 600V 24A TO220AB

IXYS
2,153 -

RFQ

IXFP24N60X

Scheda tecnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 175mOhm @ 12A, 10V 4.5V @ 2.5mA 47 nC @ 10 V ±30V 1910 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTD5C434NT4G

NTD5C434NT4G

MOSFET N-CH 40V 33A/160A DPAK

onsemi
5,000 -

RFQ

NTD5C434NT4G

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 33A (Ta), 160A (Tc) 10V 2.1mOhm @ 50A, 10V 4V @ 250µA 80.6 nC @ 10 V ±20V 5400 pF @ 25 V - 4.7W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA260N055T2

IXTA260N055T2

MOSFET N-CH 55V 260A TO263

IXYS
3,351 -

RFQ

IXTA260N055T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 260A (Tc) 10V 3.3mOhm @ 50A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 10800 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM60NB190CM2 RNG

TSM60NB190CM2 RNG

MOSFET N-CH 600V 18A TO263

Taiwan Semiconductor Corporation
2,299 -

RFQ

TSM60NB190CM2 RNG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 6A, 10V 4V @ 250µA 31 nC @ 10 V ±30V 1273 pF @ 100 V - 150.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMTS001N06CLTXG

NVMTS001N06CLTXG

T6 60V LL PQFN8*8 EXPANSI

onsemi
3,443 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 Active - - - 56.9A (Ta), 398.2A (Tc) - - - - - - - - - -
TK28E65W,S1X

TK28E65W,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage
2,316 -

RFQ

TK28E65W,S1X

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C Through Hole
IPB65R110CFDATMA2

IPB65R110CFDATMA2

MOSFET N-CH 650V 31.2A TO263-3

Infineon Technologies
3,253 -

RFQ

IPB65R110CFDATMA2

Scheda tecnica

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH12N80P

IXFH12N80P

MOSFET N-CH 800V 12A TO247AD

IXYS
3,317 -

RFQ

IXFH12N80P

Scheda tecnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 850mOhm @ 500mA, 10V 5.5V @ 2.5mA 51 nC @ 10 V ±30V 2800 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP24N65X2M

IXTP24N65X2M

MOSFET N-CH 650V 24A TO220

IXYS
2,825 -

RFQ

IXTP24N65X2M

Scheda tecnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 2060 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMT150N65S3HF

NTMT150N65S3HF

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
2,985 -

RFQ

NTMT150N65S3HF

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 540µA 43 nC @ 10 V ±30V 1985 pF @ 400 V - 192W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB24N65EFT1-GE3

SIHB24N65EFT1-GE3

N-CHANNEL 650V

Vishay Siliconix
493 -

RFQ

SIHB24N65EFT1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2774 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB30N60ET1-GE3

SIHB30N60ET1-GE3

N-CHANNEL 600V

Vishay Siliconix
684 -

RFQ

SIHB30N60ET1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STI30N65M5

STI30N65M5

MOSFET N-CH 650V 22A I2PAK

STMicroelectronics
993 -

RFQ

STI30N65M5

Scheda tecnica

Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 139mOhm @ 11A, 10V 5V @ 250µA 64 nC @ 10 V ±25V 2880 pF @ 100 V - 140W (Tc) 150°C (TJ) Through Hole
STI32N65M5

STI32N65M5

MOSFET N-CH 650V 24A I2PAK

STMicroelectronics
1,005 -

RFQ

STI32N65M5

Scheda tecnica

Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 119mOhm @ 12A, 10V 5V @ 250µA 72 nC @ 10 V ±25V 3320 pF @ 100 V - 150W (Tc) 150°C (TJ) Through Hole
STP32N65M5

STP32N65M5

MOSFET N-CH 650V 24A TO220AB

STMicroelectronics
370 -

RFQ

STP32N65M5

Scheda tecnica

Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 119mOhm @ 12A, 10V 5V @ 250µA 72 nC @ 10 V ±25V 3320 pF @ 100 V - 150W (Tc) 150°C (TJ) Through Hole
STW15NM60ND

STW15NM60ND

MOSFET N-CH 600V 14A TO247-3

STMicroelectronics
372 -

RFQ

STW15NM60ND

Scheda tecnica

Tube FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 299mOhm @ 7A, 10V 5V @ 250µA 40 nC @ 10 V ±25V 1250 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB0630N1507L

FDB0630N1507L

MOSFET N-CH 150V 130A TO263-7

onsemi
684 -

RFQ

FDB0630N1507L

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 6.4mOhm @ 18A, 10V 4V @ 250µA 135 nC @ 10 V ±20V 9895 pF @ 75 V - 3.8W (Ta), 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STO36N60M6

STO36N60M6

MOSFET N-CH 600V 30A TOLL

STMicroelectronics
964 -

RFQ

STO36N60M6

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 99mOhm @ 15A, 10V 4.75V @ 250µA 44.3 nC @ 10 V ±25V 1960 pF @ 100 V - 230W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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