Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF8714TRPBF-1

IRF8714TRPBF-1

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
2,247 -

RFQ

IRF8714TRPBF-1

Scheda tecnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.7mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1020 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHG33N60EF-GE3

SIHG33N60EF-GE3

MOSFET N-CH 600V 33A TO247AC

Vishay Siliconix
3,345 -

RFQ

SIHG33N60EF-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 98mOhm @ 16.5A, 10V 4V @ 250µA 155 nC @ 10 V ±30V 3454 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT18F60B

APT18F60B

MOSFET N-CH 600V 19A TO247

Microchip Technology
2,382 -

RFQ

APT18F60B

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 390mOhm @ 9A, 10V 5V @ 1mA 90 nC @ 10 V ±30V 3550 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Through Hole
FKP250A

FKP250A

MOSFET N-CH 250V 50A TO3P

Sanken
3,877 -

RFQ

FKP250A

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 50A (Ta) 10V 43mOhm @ 25A, 10V 4.5V @ 1mA - ±30V 3800 pF @ 25 V - 85W (Tc) 150°C (TJ) Through Hole
IRFP450PBF

IRFP450PBF

MOSFET N-CH 500V 14A TO247AC

Infineon Technologies
2,238 -

RFQ

Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 8.4A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 2600 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRLS3034-7TRL

AUIRLS3034-7TRL

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
3,560 -

RFQ

AUIRLS3034-7TRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 4.5V, 10V 1.4mOhm @ 200A, 10V 2.5V @ 250µA 180 nC @ 4.5 V ±20V 10990 pF @ 40 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STW35N65DM2

STW35N65DM2

MOSFET N-CH 650V 32A TO247

STMicroelectronics
3,085 -

RFQ

STW35N65DM2

Scheda tecnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 110mOhm @ 16A, 10V 5V @ 250µA 56.3 nC @ 10 V ±25V 2540 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS8409-7TRL

AUIRFS8409-7TRL

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies
2,744 -

RFQ

AUIRFS8409-7TRL

Scheda tecnica

Tape & Reel (TR),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 0.75mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1404STRL

AUIRF1404STRL

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies
2,465 -

RFQ

AUIRF1404STRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT65R080CFD7XTMA1

IPT65R080CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies
2,092 -

RFQ

Tape & Reel (TR) - Active - - 650 V - - - - - - - - - - Surface Mount
IAUS300N08S5N011ATMA1

IAUS300N08S5N011ATMA1

MOSFET_(75V 120V( PG-HSOG-8

Infineon Technologies
3,065 -

RFQ

IAUS300N08S5N011ATMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 410A (Tj) 6V, 10V 1.1mOhm @ 100A, 10V 3.8V @ 275µA 231 nC @ 10 V ±20V 16250 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL4010

AUIRFSL4010

MOSFET N CH 100V 180A TO262

Infineon Technologies
3,049 -

RFQ

AUIRFSL4010

Scheda tecnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) - 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V - 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA160N10T

IXTA160N10T

MOSFET N-CH 100V 160A TO263

IXYS
2,049 -

RFQ

IXTA160N10T

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 10V 7mOhm @ 25A, 10V 4.5V @ 250µA 132 nC @ 10 V ±30V 6600 pF @ 25 V - 430W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI030N10N3GXKSA1

IPI030N10N3GXKSA1

MOSFET N-CH 100V 100A TO262-3

Infineon Technologies
3,098 -

RFQ

IPI030N10N3GXKSA1

Scheda tecnica

Bulk,Tube OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPBE65R115CFD7AATMA1

IPBE65R115CFD7AATMA1

AUTOMOTIVE_COOLMOS PG-TO263-7

Infineon Technologies
3,343 -

RFQ

IPBE65R115CFD7AATMA1

Scheda tecnica

Tape & Reel (TR) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 115mOhm @ 9.7A, 10V 4.5V @ 490µA 41 nC @ 10 V ±20V 1950 pF @ 400 V - 114W (Tc) -40°C ~ 150°C (TJ) Surface Mount
R6024KNZC17

R6024KNZC17

MOSFET N-CH 600V 24A TO3PF

Rohm Semiconductor
3,422 -

RFQ

R6024KNZC17

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 5V @ 1mA 45 nC @ 10 V ±20V 2000 pF @ 25 V - 74W (Tc) 150°C (TJ) Through Hole
R6024ENZC17

R6024ENZC17

MOSFET N-CH 600V 24A TO3PF

Rohm Semiconductor
3,082 -

RFQ

R6024ENZC17

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 4V @ 1mA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
R6524KNZC17

R6524KNZC17

MOSFET N-CH 650V 24A TO3

Rohm Semiconductor
3,143 -

RFQ

R6524KNZC17

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 5V @ 750µA 45 nC @ 10 V ±20V 1850 pF @ 25 V - 74W (Tc) 150°C (TJ) Through Hole
R6524ENZC17

R6524ENZC17

MOSFET N-CH 650V 24A TO3

Rohm Semiconductor
2,469 -

RFQ

R6524ENZC17

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 4V @ 750µA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 74W (Tc) 150°C (TJ) Through Hole
TSM60NB260CI C0G

TSM60NB260CI C0G

MOSFET N-CH 600V 13A ITO220AB

Taiwan Semiconductor Corporation
2,917 -

RFQ

TSM60NB260CI C0G

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 260mOhm @ 3.9A, 10V 4V @ 250µA 30 nC @ 10 V ±30V 1273 pF @ 100 V - 32.1W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente