Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RSJ650N10TL

RSJ650N10TL

MOSFET N-CH 100V 65A LPTS

Rohm Semiconductor
665 -

RFQ

RSJ650N10TL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 65A (Ta) 4V, 10V 9.1mOhm @ 32.5A, 10V 2.5V @ 1mA 260 nC @ 10 V ±20V 10780 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
STFI6N65K3

STFI6N65K3

MOSFET N-CH 650V 5.4A I2PAKFP

STMicroelectronics
500 -

RFQ

STFI6N65K3

Scheda tecnica

Tube SuperMESH3™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 5.4A (Tc) 10V 1.3Ohm @ 2.7A, 10V 4.5V @ 50µA 33 nC @ 10 V ±30V 880 pF @ 50 V - 30W (Tc) 150°C (TJ) Through Hole
SIHW30N60E-GE3

SIHW30N60E-GE3

MOSFET N-CH 600V 29A TO247AD

Vishay Siliconix
159 -

RFQ

SIHW30N60E-GE3

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB16N50C-E3

SIHB16N50C-E3

MOSFET N-CH 500V 16A D2PAK

Vishay Siliconix
990 -

RFQ

SIHB16N50C-E3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 68 nC @ 10 V ±30V 1900 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP34N65M5

STP34N65M5

MOSFET N-CH 650V 28A TO220

STMicroelectronics
335 -

RFQ

STP34N65M5

Scheda tecnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 62.5 nC @ 10 V ±25V 2700 pF @ 100 V - 190W (Tc) 150°C (TJ) Through Hole
R6020PNJFRATL

R6020PNJFRATL

MOSFET N-CH 600V 20A LPTS

Rohm Semiconductor
922 -

RFQ

R6020PNJFRATL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 250mOhm @ 10A, 10V 4.5V @ 1mA 65 nC @ 10 V ±30V 2040 pF @ 25 V - 304W (Tc) 150°C (TJ) Surface Mount
IXFP7N100P

IXFP7N100P

MOSFET N-CH 1000V 7A TO220AB

IXYS
3,547 -

RFQ

IXFP7N100P

Scheda tecnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V 6V @ 1mA 47 nC @ 10 V ±30V 2590 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R120C7XKSA1

IPW60R120C7XKSA1

MOSFET N-CH 600V 19A TO247-3

Infineon Technologies
240 -

RFQ

IPW60R120C7XKSA1

Scheda tecnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 120mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1500 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP300N04T2

IXTP300N04T2

MOSFET N-CH 40V 300A TO220AB

IXYS
200 -

RFQ

IXTP300N04T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 2.5mOhm @ 500mA, 10V 4V @ 250µA 145 nC @ 10 V ±20V 10700 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDB2710

FDB2710

MOSFET N-CH 250V 50A D2PAK

onsemi
332 -

RFQ

FDB2710

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 250 V 50A (Tc) 10V 42.5mOhm @ 25A, 10V 5V @ 250µA 101 nC @ 10 V ±30V 7280 pF @ 25 V - 260W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STL36N60M6

STL36N60M6

MOSFET N-CH 600V 25A PWRFLAT HV

STMicroelectronics
130 -

RFQ

STL36N60M6

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 110mOhm @ 12.5A, 10V 4.75V @ 250µA 44.3 nC @ 10 V ±25V 1960 pF @ 100 V - 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP100N10S305AKSA1

IPP100N10S305AKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
165 -

RFQ

IPP100N10S305AKSA1

Scheda tecnica

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 5.1mOhm @ 100A, 10V 4V @ 240µA 176 nC @ 10 V ±20V 11570 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
STH180N10F3-2

STH180N10F3-2

MOSFET N-CH 100V 180A H2PAK-2

STMicroelectronics
2,162 -

RFQ

STH180N10F3-2

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ III Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.5mOhm @ 60A, 10V 4V @ 250µA 114.6 nC @ 10 V ±20V 6665 pF @ 25 V - 315W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STFI24N60M2

STFI24N60M2

MOSFET N CH 600V 18A TO281

STMicroelectronics
481 -

RFQ

STFI24N60M2

Scheda tecnica

Tube MDmesh™ II Plus Obsolete N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 9A, 10V 4V @ 250µA 29 nC @ 10 V ±25V 1060 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP28NM60ND

STP28NM60ND

MOSFET N-CH 600V 23A TO220

STMicroelectronics
189 -

RFQ

STP28NM60ND

Scheda tecnica

Tube FDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 150mOhm @ 11.5A, 10V 5V @ 250µA 62.5 nC @ 10 V ±25V 2090 pF @ 100 V - 190W (Tc) 150°C (TJ) Through Hole
NTMTSC1D6N10MCTXG

NTMTSC1D6N10MCTXG

MOSFET N-CH 100V 35A/267A 8TDFNW

onsemi
484 -

RFQ

NTMTSC1D6N10MCTXG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Ta), 267A (Tc) - 1.7mOhm @ 90A, 10V 4V @ 650µA 106 nC @ 10 V ±20V 7630 pF @ 50 V - 5.1W (Ta), 291W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
FDBL9403-F085T6

FDBL9403-F085T6

MOSFET N-CH 40V 50A/300A 8HPSOF

onsemi
1,630 -

RFQ

FDBL9403-F085T6

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta), 300A (Tc) - 0.95mOhm @ 50A, 10V 4V @ 250µA 108 nC @ 10 V +20V, -16V 6985 pF @ 25 V - 4.3W (Ta), 159.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STW35N60DM2

STW35N60DM2

MOSFET N-CH 600V 28A TO247

STMicroelectronics
260 -

RFQ

STW35N60DM2

Scheda tecnica

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 110mOhm @ 14A, 10V 5V @ 250µA 54 nC @ 10 V ±25V 2400 pF @ 100 V - 210W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH24N65E-T1-GE3

SIHH24N65E-T1-GE3

MOSFET N-CH 650V 23A PPAK 8 X 8

Vishay Siliconix
821 -

RFQ

SIHH24N65E-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 23A (Tc) 10V 150mOhm @ 12A, 10V 4V @ 250µA 116 nC @ 10 V ±30V 2814 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MSC360SMA120B

MSC360SMA120B

MOSFET SIC 1200 V 360 MOHM TO-24

Microchip Technology
2,963 -

RFQ

Tube - Active - - - - - - - - - - - - - -
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
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