Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA160N10T7

IXTA160N10T7

MOSFET N-CH 100V 160A TO263-7

IXYS
2,248 -

RFQ

IXTA160N10T7

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 10V 7mOhm @ 25A, 10V 4.5V @ 1mA 132 nC @ 10 V ±30V 6600 pF @ 25 V - 430W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4010TRL

AUIRFS4010TRL

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies
2,763 -

RFQ

AUIRFS4010TRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) - 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V - 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVBGS1D2N08H

NVBGS1D2N08H

T8-80V IN SUZHOU D2PAK7L FOR AUT

onsemi
3,070 -

RFQ

NVBGS1D2N08H

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 43A (Ta), 290A (Tc) 10V 1.34mOhm @ 50A, 10V 4V @ 650µA 160 nC @ 10 V ±20V 10830 pF @ 40 V - 5.7W (Ta), 259W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMTS001N06CTXG

NVMTS001N06CTXG

MOSFET N-CH 60V 53.7A/376A 8DFNW

onsemi
3,061 -

RFQ

NVMTS001N06CTXG

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 53.7A (Ta), 376A (Tc) 10V 910mOhm @ 50A, 10V 4V @ 250µA 113 nC @ 10 V ±20V 8705 pF @ 30 V - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3006-7TRL

AUIRFS3006-7TRL

MOSFET N-CH 60V 293A D2PAK-7P

Infineon Technologies
2,097 -

RFQ

AUIRFS3006-7TRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) - 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V - 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK110N65Z,S1F

TK110N65Z,S1F

POWER MOSFET TRANSISTOR TO-247(O

Toshiba Semiconductor and Storage
3,300 -

RFQ

TK110N65Z,S1F

Scheda tecnica

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Through Hole
NVHL095N65S3F

NVHL095N65S3F

SF3 FRFET AUTO 95MOHM TO-247

onsemi
2,210 -

RFQ

NVHL095N65S3F

Scheda tecnica

Tray SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 95mOhm @ 18A, 10V 5V @ 860µA 66 nC @ 10 V ±30V 3020 pF @ 400 V - 272W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA35N65DM2

STWA35N65DM2

PTD HIGH VOLTAGE

STMicroelectronics
3,149 -

RFQ

Tube - Active - - - 32A (Tc) - - - - - - - - - -
R6530KNZC17

R6530KNZC17

MOSFET N-CH 650V 30A TO3

Rohm Semiconductor
3,115 -

RFQ

R6530KNZC17

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 140mOhm @ 14.5A, 10V 5V @ 960µA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 86W (Tc) 150°C (TJ) Through Hole
R6530ENZC17

R6530ENZC17

MOSFET N-CH 650V 30A TO3

Rohm Semiconductor
2,130 -

RFQ

R6530ENZC17

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 140mOhm @ 14.5A, 10V 4V @ 960µA 90 nC @ 10 V ±20V 2100 pF @ 25 V - 86W (Tc) 150°C (TJ) Through Hole
IPI120N08S403AKSA1

IPI120N08S403AKSA1

MOSFET N-CH 80V 120A TO262-3

Infineon Technologies
3,305 -

RFQ

IPI120N08S403AKSA1

Scheda tecnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 2.8mOhm @ 100A, 10V 4V @ 223µA 167 nC @ 10 V ±20V 11550 pF @ 25 V - 278W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP75N10P

IXTP75N10P

MOSFET N-CH 100V 75A TO220AB

IXYS
2,135 -

RFQ

IXTP75N10P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 25mOhm @ 500mA, 10V 5.5V @ 250µA 74 nC @ 10 V ±20V 2250 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA05N100HV

IXTA05N100HV

MOSFET N-CH 1000V 750MA TO263

IXYS
2,760 -

RFQ

IXTA05N100HV

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 750mA (Tc) 10V 17Ohm @ 375mA, 10V 4.5V @ 250µA 7.8 nC @ 10 V ±30V 260 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA24N60X

IXFA24N60X

MOSFET N-CH 600V 24A TO263AA

IXYS
3,395 -

RFQ

IXFA24N60X

Scheda tecnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 175mOhm @ 12A, 10V 4.5V @ 2.5mA 47 nC @ 10 V ±30V 1910 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUS300N10S5N014ATMA1

IAUS300N10S5N014ATMA1

MOSFET_(75V 120V( PG-HSOG-8

Infineon Technologies
2,693 -

RFQ

IAUS300N10S5N014ATMA1

Scheda tecnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 360A (Tj) 6V, 10V 1.4mOhm @ 100A, 10V 3.8V @ 275µA 216 nC @ 10 V ±20V 16011 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP7718PBF

IRFP7718PBF

MOSFET N-CH 75V 195A TO247AC

Infineon Technologies
3,280 -

RFQ

IRFP7718PBF

Scheda tecnica

Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 6V, 10V 1.8mOhm @ 100A, 10V 3.7V @ 250µA 830 nC @ 10 V ±20V 29550 pF @ 25 V - 517W (Tc) -55°C ~ 175°C (TJ) Through Hole
STB46N60M6

STB46N60M6

MOSFET N-CH 600V 36A D2PAK

STMicroelectronics
2,324 -

RFQ

STB46N60M6

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 80mOhm @ 18A, 10V 4.75V @ 250µA 53.5 nC @ 10 V ±25V 2340 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP30N60X

IXFP30N60X

MOSFET N-CH 600V 30A TO220

IXYS
3,777 -

RFQ

IXFP30N60X

Scheda tecnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 155mOhm @ 15A, 10V 4.5V @ 4mA 56 nC @ 10 V ±30V 2270 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVHL095N65S3HF

NVHL095N65S3HF

SUPERFER3 FRFET AUTOMOTIVE 95MOH

onsemi
3,914 -

RFQ

NVHL095N65S3HF

Scheda tecnica

Tray SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 95mOhm @ 18A, 10V 5V @ 860µA 66 nC @ 10 V ±30V 3105 pF @ 400 V - 272W (Tc) -55°C ~ 150°C (TJ) Through Hole
STFW8N120K5

STFW8N120K5

MOSFET N-CH 1200V 6A TO3PF

STMicroelectronics
2,238 -

RFQ

STFW8N120K5

Scheda tecnica

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2Ohm @ 2.5A, 10V 5V @ 100µA 13.7 nC @ 10 V ±30V 505 pF @ 100 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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