Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STH400N4F6-2

STH400N4F6-2

MOSFET N-CH 40V 180A H2PAK-2

STMicroelectronics
943 -

RFQ

STH400N4F6-2

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, DeepGATE™, STripFET™ VI Obsolete N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.15mOhm @ 60A, 10V 4.5V @ 250µA 404 nC @ 10 V ±20V 20500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STFI40N60M2

STFI40N60M2

MOSFET N-CH 600V 34A I2PAKFP

STMicroelectronics
172 -

RFQ

STFI40N60M2

Scheda tecnica

Tube MDmesh™ II Plus Obsolete N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 88mOhm @ 17A, 10V 4V @ 250µA 57 nC @ 10 V ±25V 2500 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMT800150DC

FDMT800150DC

MOSFET N-CH 150V 15A/99A 8DUAL

onsemi
2,910 -

RFQ

FDMT800150DC

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 15A (Ta), 99A (Tc) 6V, 10V 6.5mOhm @ 15A, 10V 4V @ 250µA 108 nC @ 10 V ±20V 8205 pF @ 75 V - 3.2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STL47N60M6

STL47N60M6

MOSFET N-CH 600V 31A PWRFLAT HV

STMicroelectronics
1,259 -

RFQ

STL47N60M6

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 80mOhm @ 15.5A, 10V 4.75V @ 250µA 57 nC @ 10 V ±25V - - 189W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STW48N60M2

STW48N60M2

MOSFET N-CH 600V 42A TO247

STMicroelectronics
456 -

RFQ

STW48N60M2

Scheda tecnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 70mOhm @ 21A, 10V 4V @ 250µA 70 nC @ 10 V ±25V 3060 pF @ 100 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQL40N50

FQL40N50

MOSFET N-CH 500V 40A TO264-3

onsemi
193 -

RFQ

FQL40N50

Scheda tecnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 110mOhm @ 20A, 10V 5V @ 250µA 200 nC @ 10 V ±30V 7500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6030KNZ4C13

R6030KNZ4C13

MOSFET N-CH 600V 30A TO247

Rohm Semiconductor
600 -

RFQ

R6030KNZ4C13

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 5V @ 1mA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 305W (Tc) 150°C (TJ) Through Hole
NTMFS5H400NLT1G

NTMFS5H400NLT1G

MOSFET N-CH 40V 46A/330A 5DFN

onsemi
178 -

RFQ

NTMFS5H400NLT1G

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 330A (Tc) 4.5V, 10V 0.8mOhm @ 50A, 10V 2V @ 250µA 120 nC @ 10 V ±20V 7700 pF @ 20 V - 3.3W (Ta), 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP32NM50N

STP32NM50N

MOSFET N CH 500V 22A TO-220

STMicroelectronics
120 -

RFQ

STP32NM50N

Scheda tecnica

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 130mOhm @ 11A, 10V 4V @ 250µA 62.5 nC @ 10 V ±25V 1973 pF @ 50 V - 190W (Tc) 150°C (TJ) Through Hole
STO67N60DM6

STO67N60DM6

MOSFET N-CH 600V 33A TOLL

STMicroelectronics
1,165 -

RFQ

Tape & Reel (TR),Cut Tape (CT) MDmesh™ DM6 Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 59mOhm @ 23.75A, 10V 4.75V @ 250µA 72.5 nC @ 10 V ±25V 3400 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6020FNX

R6020FNX

MOSFET N-CH 600V 20A TO220FM

Rohm Semiconductor
494 -

RFQ

R6020FNX

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 250mOhm @ 10A, 10V 5V @ 1mA 65 nC @ 10 V ±30V 2040 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
C3M0120065J

C3M0120065J

650V 120M SIC MOSFET

Wolfspeed, Inc.
982 -

RFQ

C3M0120065J

Scheda tecnica

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) 15V 157mOhm @ 6.76A, 15V 3.6V @ 1.86mA 26 nC @ 15 V +19V, -8V 640 pF @ 400 V - 86W (Tc) -40°C ~ 175°C (TJ) Surface Mount
STW30NM50N

STW30NM50N

MOSFET N-CH 500V 27A TO247-3

STMicroelectronics
222 -

RFQ

STW30NM50N

Scheda tecnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 500 V 27A (Tc) 10V 115mOhm @ 13.5A, 10V 4V @ 250µA 94 nC @ 10 V ±25V 2740 pF @ 50 V - 190W (Tc) 150°C (TJ) Through Hole
STF28NM60ND

STF28NM60ND

MOSFET N-CH 600V 23A TO220FP

STMicroelectronics
951 -

RFQ

STF28NM60ND

Scheda tecnica

Tube FDmesh™ II Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 150mOhm @ 11.5A, 10V 5V @ 250µA 62.5 nC @ 10 V ±25V 2090 pF @ 100 V - 35W (Tc) 150°C (TJ) Through Hole
STB28NM60ND

STB28NM60ND

MOSFET N-CH 600V 23A D2PAK

STMicroelectronics
449 -

RFQ

STB28NM60ND

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) FDmesh™ II Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 150mOhm @ 11.5A, 10V 5V @ 250µA 62.5 nC @ 10 V ±25V 2090 pF @ 100 V - 190W (Tc) 150°C (TJ) Surface Mount
TPCC8104,L1Q(CM

TPCC8104,L1Q(CM

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage
3,575 -

RFQ

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C Surface Mount
TPCC8105,L1Q(CM

TPCC8105,L1Q(CM

MOSFET P-CH 30V 23A 8TSON

Toshiba Semiconductor and Storage
3,422 -

RFQ

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 23A (Ta) 4.5V, 10V 7.8mOhm @ 11.5A, 10V 2V @ 500µA 76 nC @ 10 V +20V, -25V 3240 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C Surface Mount
TPCC8136.LQ

TPCC8136.LQ

MOSFET P-CH 20V 9.4A 8TSON

Toshiba Semiconductor and Storage
2,387 -

RFQ

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.8V, 4.5V 16mOhm @ 9.4A, 4.5V 1.2V @ 1mA 36 nC @ 5 V ±12V 2350 pF @ 10 V - 700mW (Ta), 18W (Tc) 150°C Surface Mount
TK40J20D,S1F(O

TK40J20D,S1F(O

MOSFET N-CH 200V 40A TO3P

Toshiba Semiconductor and Storage
3,668 -

RFQ

Tray π-MOSVIII Active N-Channel MOSFET (Metal Oxide) 200 V 40A (Ta) 10V 44mOhm @ 20A, 10V 3.5V @ 1mA 100 nC @ 10 V ±20V 4300 pF @ 100 V - 260W (Tc) 150°C Through Hole
TPCC8104,L1Q

TPCC8104,L1Q

MOSFET P-CH 30V 20A 8TSON

Toshiba Semiconductor and Storage
3,181 -

RFQ

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) 4.5V, 10V 8.8mOhm @ 10A, 10V 2V @ 500µA 58 nC @ 10 V +20V, -25V 2260 pF @ 10 V - 700mW (Ta), 27W (Tc) 150°C Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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