Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFH18N65X2

IXFH18N65X2

MOSFET N-CH 650V 18A TO247

IXYS
3,420 -

RFQ

IXFH18N65X2

Scheda tecnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 200mOhm @ 9A, 10V 5V @ 1.5mA 29 nC @ 10 V ±30V 1520 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS5C677NLT1G

NTMFS5C677NLT1G

MOSFET N-CH 60V 11A/36A 5DFN

onsemi
3,268 -

RFQ

NTMFS5C677NLT1G

Scheda tecnica

Tape & Reel (TR),Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 36A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2V @ 25µA 9.7 nC @ 10 V ±20V 620 pF @ 25 V - 3.5W (Ta), 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA60N20T

IXTA60N20T

MOSFET N-CH 200V 60A TO263

IXYS
2,079 -

RFQ

IXTA60N20T

Scheda tecnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 40mOhm @ 30A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 4530 pF @ 25 V - 500W (Tc) - Surface Mount
AUIRFSA8409-7P

AUIRFSA8409-7P

MOSFET N-CH 40V 523A D2PAK

Infineon Technologies
2,592 -

RFQ

AUIRFSA8409-7P

Scheda tecnica

Tube Automotive, AEC-Q101, HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 523A (Tc) 10V 0.69mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STI11NM80

STI11NM80

MOSFET N-CH 800V 11A I2PAK

STMicroelectronics
2,724 -

RFQ

STI11NM80

Scheda tecnica

Tube MDmesh™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 400mOhm @ 5.5A, 10V 5V @ 250µA 43.6 nC @ 10 V ±30V 1630 pF @ 25 V - 150W (Tc) -65°C ~ 150°C (TJ) Through Hole
APT11F80B

APT11F80B

MOSFET N-CH 800V 12A TO247

Microchip Technology
3,842 -

RFQ

APT11F80B

Scheda tecnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 900mOhm @ 6A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2471 pF @ 25 V - 337W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA50N20P

IXTA50N20P

MOSFET N-CH 200V 50A TO263

IXYS
3,038 -

RFQ

IXTA50N20P

Scheda tecnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 60mOhm @ 50A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 2720 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFA26N50P3

IXFA26N50P3

MOSFET N-CH 500V 26A TO263

IXYS
3,664 -

RFQ

IXFA26N50P3

Scheda tecnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5V @ 4mA 42 nC @ 10 V ±30V 2220 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA14N85XHV

IXFA14N85XHV

MOSFET N-CH 850V 14A TO263

IXYS
3,208 -

RFQ

IXFA14N85XHV

Scheda tecnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 14A (Tc) 10V 550mOhm @ 500mA, 10V 5.5V @ 1mA 30 nC @ 10 V ±30V 1043 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS4010-7TRL

AUIRFS4010-7TRL

MOSFET N-CH 100V 190A D2PAK-7P

Infineon Technologies
3,047 -

RFQ

AUIRFS4010-7TRL

Scheda tecnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) - 4mOhm @ 110A, 10V 4V @ 250µA 230 nC @ 10 V - 9830 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STFW38N65M5

STFW38N65M5

MOSFET N-CH 650V 30A ISOWATT

STMicroelectronics
3,612 -

RFQ

STFW38N65M5

Scheda tecnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 5V @ 250µA 71 nC @ 10 V ±25V 3000 pF @ 100 V - 57W (Tc) 150°C (TJ) Through Hole
IXFA30N60X

IXFA30N60X

MOSFET N-CH 600V 30A TO263

IXYS
2,919 -

RFQ

IXFA30N60X

Scheda tecnica

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 155mOhm @ 15A, 10V 4.5V @ 4mA 56 nC @ 10 V ±30V 2270 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK28N65W,S1F

TK28N65W,S1F

MOSFET N-CH 650V 27.6A TO247

Toshiba Semiconductor and Storage
3,759 -

RFQ

TK28N65W,S1F

Scheda tecnica

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) Through Hole
FKP300A

FKP300A

MOSFET N-CH 300V 30A TO3PF

Sanken
2,040 -

RFQ

FKP300A

Scheda tecnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 300 V 30A (Ta) 10V 65mOhm @ 15A, 10V 4.5V @ 1mA - ±30V 3800 pF @ 25 V - 85W (Tc) 150°C (TJ) Through Hole
IXFQ26N50P3

IXFQ26N50P3

MOSFET N-CH 500V 26A TO3P

IXYS
2,920 -

RFQ

IXFQ26N50P3

Scheda tecnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5V @ 4mA 42 nC @ 10 V ±30V 2220 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDCTR3065A

NDCTR3065A

MOSFET N-CH 650V 30A SMD

onsemi
2,482 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
IPP65R110CFDXKSA1

IPP65R110CFDXKSA1

MOSFET N-CH 700V 31.2A TO220-3

Infineon Technologies
3,651 -

RFQ

IPP65R110CFDXKSA1

Scheda tecnica

Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 700 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R110CFDXKSA2

IPP65R110CFDXKSA2

MOSFET N-CH 650V 31.2A TO220-3

Infineon Technologies
2,807 -

RFQ

IPP65R110CFDXKSA2

Scheda tecnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R110CFDXKSA1

IPA65R110CFDXKSA1

MOSFET N-CH 650V 31.2A TO220

Infineon Technologies
3,081 -

RFQ

IPA65R110CFDXKSA1

Scheda tecnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R110CFDXKSA2

IPA65R110CFDXKSA2

MOSFET N-CH 650V 31.2A TO220

Infineon Technologies
2,984 -

RFQ

IPA65R110CFDXKSA2

Scheda tecnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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