Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STW60N65M5

STW60N65M5

MOSFET N-CH 650V 46A TO247

STMicroelectronics
589 -

RFQ

STW60N65M5

Scheda tecnica

Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 59mOhm @ 23A, 10V 5V @ 250µA 139 nC @ 10 V ±25V 6810 pF @ 100 V - 255W (Tc) 150°C (TJ) Through Hole
NVBG160N120SC1

NVBG160N120SC1

SICFET N-CH 1200V 19.5A D2PAK

onsemi
585 -

RFQ

NVBG160N120SC1

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 19.5A (Tc) 20V 224mOhm @ 12A, 20V 4.3V @ 2.5mA 33.8 nC @ 20 V +25V, -15V 678 pF @ 800 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TP90H180PS

TP90H180PS

GANFET N-CH 900V 15A TO220AB

Transphorm
173 -

RFQ

TP90H180PS

Scheda tecnica

Tube - Obsolete N-Channel GaNFET (Cascode Gallium Nitride FET) 900 V 15A (Tc) 10V 205mOhm @ 10A, 10V 2.6V @ 500µA 10 nC @ 8 V ±18V 780 pF @ 600 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT3120AW7TL

SCT3120AW7TL

SICFET N-CH 650V 21A TO263-7

Rohm Semiconductor
858 -

RFQ

SCT3120AW7TL

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) - 156mOhm @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 460 pF @ 500 V - 100W 175°C (TJ) Surface Mount
NTMTS001N06CTXG

NTMTS001N06CTXG

MOSFET N-CH 60V 53.7A/376A 8DFNW

onsemi
281 -

RFQ

NTMTS001N06CTXG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 53.7A (Ta), 376A (Tc) 10V 0.91mOhm @ 50A, 10V 4V @ 250µA 113 nC @ 10 V ±20V 8705 pF @ 30 V - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVBLS4D0N15MC

NVBLS4D0N15MC

MOSFET N-CH 150V 19A/187A 8HPSOF

onsemi
1,580 -

RFQ

NVBLS4D0N15MC

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 150 V 19A (Ta), 187A (Tc) 8V, 10V 4.4mOhm @ 80A, 10V 4.5V @ 584µA 90.4 nC @ 10 V ±20V 7490 pF @ 75 V - 3.4W (Ta), 316W (Tc) -55°C ~ 175°C (TJ) Surface Mount
E3M0120090J

E3M0120090J

900V 120M AUTOMOTIVE SIC MOSFET

Wolfspeed, Inc.
1,299 -

RFQ

E3M0120090J

Scheda tecnica

Tube E-Series, Automotive Active N-Channel SiCFET (Silicon Carbide) 900 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 18 nC @ 15 V +15V, -4V 414 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STW68N60M6

STW68N60M6

MOSFET N-CH 600V TO247-3

STMicroelectronics
347 -

RFQ

Tube MDmesh™ Active - - - 63A (Tc) - - - - - - - - - Through Hole
STWA57N65M5

STWA57N65M5

MOSFET N-CH 650V 42A TO247

STMicroelectronics
103 -

RFQ

STWA57N65M5

Scheda tecnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 42A (Tc) 10V 63mOhm @ 21A, 10V 5V @ 250µA 98 nC @ 10 V ±25V 4200 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
STB34NM60ND

STB34NM60ND

MOSFET N-CH 600V 29A D2PAK

STMicroelectronics
422 -

RFQ

STB34NM60ND

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) FDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 110mOhm @ 14.5A, 10V 5V @ 250µA 80.4 nC @ 10 V ±25V 2785 pF @ 50 V - 190W (Tc) 150°C (TJ) Surface Mount
FDMT80040DC

FDMT80040DC

MOSFET N-CH 40V 420A 8PQFN

onsemi
919 -

RFQ

FDMT80040DC

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 420A (Tc) 6V, 10V 0.56mOhm @ 64A, 10V 4V @ 250µA 338 nC @ 10 V ±20V 26110 pF @ 20 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH13N80

IXTH13N80

MOSFET N-CH 800V 13A TO247

IXYS
177 -

RFQ

IXTH13N80

Scheda tecnica

Tube MegaMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 800mOhm @ 500mA, 10V 4.5V @ 250µA 170 nC @ 10 V ±20V 4500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP38N60EF-GE3

SIHP38N60EF-GE3

MOSFET N-CH 600V 40A TO220AB

Vishay Siliconix
2,111 -

RFQ

SIHP38N60EF-GE3

Scheda tecnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 70mOhm @ 23.5A, 10V 4V @ 250µA 189 nC @ 10 V ±30V 3576 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP44N25X3

IXFP44N25X3

MOSFET N-CH 250V 44A TO220AB

IXYS
2,274 -

RFQ

IXFP44N25X3

Scheda tecnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 40mOhm @ 22A, 10V 4.5V @ 1mA 33 nC @ 10 V ±20V 2200 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH24N65EF-T1-GE3

SIHH24N65EF-T1-GE3

MOSFET N-CH 650V 23A PPAK 8 X 8

Vishay Siliconix
3,038 -

RFQ

SIHH24N65EF-T1-GE3

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 2780 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6035ENZ4C13

R6035ENZ4C13

MOSFET N-CH 600V 35A TO247

Rohm Semiconductor
2,364 -

RFQ

R6035ENZ4C13

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V, 15V 102mOhm @ 35A, 15V - - - - - 379W (Tc) - Through Hole
IXTA300N04T2

IXTA300N04T2

MOSFET N-CH 40V 300A TO263

IXYS
2,709 -

RFQ

IXTA300N04T2

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 2.5mOhm @ 500mA, 10V 4V @ 250µA 145 nC @ 10 V ±20V 10700 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA300N04T2-7

IXTA300N04T2-7

MOSFET N-CH 40V 300A TO263-7

IXYS
2,454 -

RFQ

IXTA300N04T2-7

Scheda tecnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 2.5mOhm @ 50A, 10V 4V @ 250µA 145 nC @ 10 V ±20V 10700 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA140P05T-TRL

IXTA140P05T-TRL

IXTA140P05T

IXYS
2,141 -

RFQ

Tape & Reel (TR) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 140A (Tc) 10V 9mOhm @ 70A, 10V 4V @ 250µA 200 nC @ 10 V ±15V 13500 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS3107-7TRL

AUIRFS3107-7TRL

MOSFET N-CH 75V 240A D2PAK-7

Infineon Technologies
3,342 -

RFQ

AUIRFS3107-7TRL

Scheda tecnica

Tape & Reel (TR),Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) - 2.6mOhm @ 160A, 10V 4V @ 250µA 240 nC @ 10 V - 9200 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

Home

Fudong Communication (Shenzhen) Group Co., Ltd.

Prodotto

Fudong Communication (Shenzhen) Group Co., Ltd.

Telefono

Fudong Communication (Shenzhen) Group Co., Ltd.

Utente