Transistor - FET, MOSFET - Singolo

Foto: Numero parte produttore Disponibilità Prezzo Quantità Scheda tecnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFA76N15T2

IXFA76N15T2

MOSFET N-CH 150V 76A TO263AA

IXYS
3,676 -

RFQ

IXFA76N15T2

Scheda tecnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 76A (Tc) 10V 20mOhm @ 38A, 10V 4.5V @ 250µA 97 nC @ 10 V ±20V 5800 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP13NK60ZFP

STP13NK60ZFP

MOSFET N-CH 600V 13A TO220FP

STMicroelectronics
2,494 -

RFQ

STP13NK60ZFP

Scheda tecnica

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 550mOhm @ 4.5A, 10V 4.5V @ 100µA 92 nC @ 10 V ±30V 2030 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS4127TRL

AUIRFS4127TRL

MOSFET N-CH 200V 72A D2PAK

Infineon Technologies
3,428 -

RFQ

AUIRFS4127TRL

Scheda tecnica

Tape & Reel (TR) Automotive, AEC-Q101, HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 22mOhm @ 44A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 5380 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL60SL216

IRL60SL216

MOSFET N-CH 60V 195A TO262-3

Infineon Technologies
893 -

RFQ

IRL60SL216

Scheda tecnica

Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 1.95mOhm @ 100A, 10V 2.4V @ 250µA 255 nC @ 4.5 V ±20V 15330 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH34N50P3

IXFH34N50P3

MOSFET N-CH 500V 34A TO247AD

IXYS
297 -

RFQ

IXFH34N50P3

Scheda tecnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 34A (Tc) 10V 170mOhm @ 17A, 10V 5V @ 4mA 60 nC @ 10 V ±30V 3260 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCB36N60NTM

FCB36N60NTM

MOSFET N-CH 600V 36A D2PAK

onsemi
660 -

RFQ

FCB36N60NTM

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) SupreMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 4V @ 250µA 112 nC @ 10 V ±30V 4785 pF @ 100 V - 312W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVBLS0D5N04CTXG

NVBLS0D5N04CTXG

MOSFET N-CH 40V 65A/300A 8HPSOF

onsemi
1,990 -

RFQ

NVBLS0D5N04CTXG

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 65A (Ta), 300A (Tc) - 0.57mOhm @ 50A, 10V 4V @ 475µA 185 nC @ 10 V +20V, -16V 12600 pF @ 25 V - 4.3W (Ta), 198.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STWA45N65M5

STWA45N65M5

MOSFET N-CH 650V 35A TO247

STMicroelectronics
349 -

RFQ

STWA45N65M5

Scheda tecnica

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 78mOhm @ 17.5A, 10V 5V @ 250µA 82 nC @ 10 V ±25V 3470 pF @ 100 V - 210W (Tc) 150°C (TJ) Through Hole
NVB082N65S3F

NVB082N65S3F

MOSFET N-CH 650V 40A D2PAK-3

onsemi
573 -

RFQ

NVB082N65S3F

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 82mOhm @ 20A, 10V 5V @ 4mA 81 nC @ 10 V ±30V 3410 pF @ 400 V - 313W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTBLS0D7N06C

NTBLS0D7N06C

MOSFET N-CH 60V 54A/470A 8HPSOF

onsemi
1,018 -

RFQ

NTBLS0D7N06C

Scheda tecnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 54A (Ta), 470A (Tc) 6V, 10V 0.75mOhm @ 80A, 10V 4V @ 661µA 170 nC @ 10 V ±20V 13730 pF @ 30 V - 4.2W (Ta), 314W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STWA48N60M2

STWA48N60M2

MOSFET N-CH 600V 42A TO247

STMicroelectronics
207 -

RFQ

STWA48N60M2

Scheda tecnica

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 70mOhm @ 21A, 10V 4V @ 250µA 70 nC @ 10 V ±25V 3060 pF @ 100 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW32N65M5

STW32N65M5

MOSFET N-CH 650V 24A TO247-3

STMicroelectronics
506 -

RFQ

STW32N65M5

Scheda tecnica

Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 119mOhm @ 12A, 10V 5V @ 250µA 72 nC @ 10 V ±25V 3320 pF @ 100 V - 150W (Tc) 150°C (TJ) Through Hole
IXFQ22N60P3

IXFQ22N60P3

MOSFET N-CH 600V 22A TO3P

IXYS
285 -

RFQ

IXFQ22N60P3

Scheda tecnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 360mOhm @ 11A, 10V 5V @ 1.5mA 38 nC @ 10 V ±30V 2600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
TPH3206PSB

TPH3206PSB

GANFET N-CH 650V 16A TO220AB

Transphorm
505 -

RFQ

TPH3206PSB

Scheda tecnica

Tube - Obsolete N-Channel GaNFET (Gallium Nitride) 650 V 16A (Tc) 10V 180mOhm @ 10A, 8V 2.6V @ 500µA 6.2 nC @ 4.5 V ±18V 720 pF @ 480 V - 81W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6035KNZ4C13

R6035KNZ4C13

MOSFET N-CH 600V 35A TO247

Rohm Semiconductor
600 -

RFQ

R6035KNZ4C13

Scheda tecnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 102mOhm @ 18.1A, 10V 5V @ 1mA 72 nC @ 10 V ±20V 3000 pF @ 25 V - 379W (Tc) 150°C (TJ) Through Hole
STF35N65M5

STF35N65M5

MOSFET N-CH 650V 27A TO220FP

STMicroelectronics
468 -

RFQ

STF35N65M5

Scheda tecnica

Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 650 V 27A (Tc) 10V 98mOhm @ 13.5A, 10V 5V @ 250µA 83 nC @ 10 V ±25V 3750 pF @ 100 V - 40W (Tc) 150°C (TJ) Through Hole
TPH3208PS

TPH3208PS

GANFET N-CH 650V 20A TO220AB

Transphorm
572 -

RFQ

TPH3208PS

Scheda tecnica

Tube - Obsolete N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 20A (Tc) 10V 130mOhm @ 13A, 8V 2.6V @ 300µA 14 nC @ 8 V ±18V 760 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ50N50P3

IXFQ50N50P3

MOSFET N-CH 500V 50A TO3P

IXYS
192 -

RFQ

IXFQ50N50P3

Scheda tecnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) 10V 120mOhm @ 25A, 10V 5V @ 4mA 85 nC @ 10 V ±30V 4335 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
TPH3208LDG

TPH3208LDG

GANFET N-CH 650V 20A 3PQFN

Transphorm
158 -

RFQ

TPH3208LDG

Scheda tecnica

Tube - Obsolete N-Channel GaNFET (Gallium Nitride) 650 V 20A (Tc) 10V 130mOhm @ 13A, 8V 2.6V @ 300µA 14 nC @ 8 V ±18V 760 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SCTWA10N120

SCTWA10N120

IC POWER MOSFET 1200V HIP247

STMicroelectronics
500 -

RFQ

SCTWA10N120

Scheda tecnica

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V 12A (Tc) 20V 690mOhm @ 6A, 20V 3.5V @ 250µA (Typ) 21 nC @ 20 V +25V, -10V 300 pF @ 1000 V - 110W (Tc) -55°C ~ 200°C (TJ) Through Hole
1500+
1500+ Media giornaliera RFQ
20,000.000
20,000.000 Unità prodotto standard
1800+
1800+ Produttori mondiali
15,000+
15,000+ Magazzino in stock
Fudong Communication (Shenzhen) Group Co., Ltd.

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